Allicdata Part #: | IRF6636TR1PBFTR-ND |
Manufacturer Part#: |
IRF6636TR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 18A DIRECTFET |
More Detail: | N-Channel 20V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (T... |
DataSheet: | IRF6636TR1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | DirectFET™ Isometric ST |
Supplier Device Package: | DIRECTFET™ ST |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2420pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 81A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF6636TR1PBF is an extremely versatile and powerful transistor. It has a wide range of applications and it is a crucial component of many types of electronic circuits. This article will provide an overview of the IRF6636TR1PBF application field, working principle and advantages.
Application Field
The IRF6636TR1PBF is a type of Field-Effect Transistor (FET) known as an Insulated-Gate Transistor. It belongs to the type of transistors called Power MOSFETs. This means that this transistor has a large area of gate oxide that insulates the gate from the channel. This enables it to switch between two states, on (or conducting) and off (or non-conducting), thus controlling the flow of current from the drain to the source.
This type of transistor is used in power electronics, specifically in the area of power management. It is an ideal component for use in voltage regulators, motor control circuits, switched power converters, solid-state relays and heat-sink controllers. It has very low on-state resistance, which makes it very efficient in power control applications. The wide variety of gate-source voltage ratings, high current ratings and fast switching speeds makes it a reliable and flexible choice for any power application.
Working Principle
The IRF6636TR1PBF transistor works on the principle of field-effect. It has an insulated insulated gate and source that controls the flow of current through the transistor. It works on the principle of an electrostatic field. The gate-source voltage controls the amount of current through the transistor. When the voltage is increased, the current increases as well, enabling the gate to switch faster and more efficiently.
When the gate-source voltage is at the appropriate level, a current is passed through the channel between the drain and the source. This current is what results in switching between the on and off states. The high input impedance of the transistor enables it to pass a large current through the drain-source channel with low drive current.
The use of low on-resistance also enables fast switching speeds, making the transistor suitable for applications where high speed is needed. It also has high surge current, which makes it ideal for use in high power applications. This ensures that the transistor can switch from the on to off state quickly, avoiding any potential damage.
Advantages
The IRF6636TR1PBF has many advantages that make it suitable for a wide variety of applications. Its low on-state resistance makes it very efficient in power control applications. Its high input impedance enables it to pass a large current with low drive current. Its fast switching speeds make it suitable for applications where high speed is needed. Additionally, its high surge current capability makes it suitable for use in high power applications.
The use of insulated-gate technology also enhances the reliability of the transistor, as it is not affected by the presence of leakage currents. Furthermore, this type of transistor has very low gate capacitance, which enables it to achieve high switching frequencies. This makes it an ideal choice for applications such as high frequency switching power supplies.
In conclusion, the IRF6636TR1PBF is an extremely versatile and powerful transistor with a wide range of applications. Its combination of features and advantages makes it a reliable and flexible choice for power management applications. It is the ideal choice for voltage regulators, motor control circuits, switched power converters, solid-state relays and heat-sink controllers.
The specific data is subject to PDF, and the above content is for reference
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