IRF6668TR1PBF Discrete Semiconductor Products

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The IRF6668TR1PBF is a type of insulated-gate field-effect transistor (IGFET). It is an N-Channel enhancement-mode FET with a packaged height of 2.10 mm, designed to operate with high speed and power. It is commonly used in applications demanding minimal switching times and looks just like any other IGFET.

An IGFET is a type of field-effect transistor (FET) characterized by its insulated gate, which is isolated from the channel by an oxide layer, along with high electrical isolation between gate and drain. IGFETs conduct electric current between source and drain terminals, just like a normal FET, but the gate terminal acts as if the current is conducted through a gate insulating material. With the help of an applied voltage at the gate, the current can be switched on or off. The IRF6668TR1PBF is mainly designed to serve these switch requirements with minimal switching times.

The IRF6668TR1PBF is designed with a very low on-resistance rating of 0.30 ohm, making it suitable for use in high power applications. The FET has a dielectric breakdown of 2,200V and an off-state drain current of 50nA. The maximum drain source voltage (VDSS) of the IRF6668TR1PBF is 30V, with a maximum gate-source voltage (VGS) rating of ±12V. The junction temperature range of the IRF6668TR1PBF is from -55°C to 175°C and the drain-source On-state resistance at 10V is 0.76 ohm.

Applications for the IRF6668TR1PBF include power management in a wide range of consumer electronics, automotive, and industrial systems. It is suitable for use in a variety of power conversion applications, such as synchronous DC-DC converters, wireless audio equipment, smart phones, memory caching, and other similar applications. The IGFET’s design makes it suitable for use in applications which require minimal switching times and a high degree of power handling capabilities.

The IRF6668TR1PBF’s working principle is simple and straightforward. The gate terminal is isolated from the channel by an oxide layer, while the source and drain terminals create a channel between them. When a voltage is applied to the gate terminal, the electric current is enabled to flow between the source and drain. This gate voltage determines the resistance between the source and drain terminals. A higher voltage applied to the gate will result in a higher drain-source resistance and a lower voltage applied to the gate will result in a lower drain-source resistance.

The IRF6668TR1PBF’s design makes it perfect for use in applications which require a higher degree of power handling capabilities with minimal switching times. Its low on-resistance rating and its ability to work between the -55°C to 175°C temperature range further make it the perfect choice for power conversion and management in various types of consumer electronics, automotive, and industrial systems.

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