IRF6723M2DTR1P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF6723M2DTR1P is a bi-directional normally-on dual N-channel field effect power transistor array. It is a low voltage, low on-resistance, high current silicon transistor device. It is well suited for Pulse Width Modulation (PWM) applications that require fast switching speeds, low input capacitance, and low on-resistance.

The IRF6723M2DTR1P array is a silicon N channel junction field effect transistor (JFET) in a monolithic array that has two isolated channels. Each transistor (channel) has its own gate, drain, and source. The two channels can be connected in series or parallel to increase the drain-to-source current flow.

The bi-directional normally-on feature of the array makes it well suited for bidirectional power conversion. This allows for rapid switching between on and off states with low voltage levels, compared to that of NMOS technologies. It is also suitable for fast switching applications such as motor control and adjustable speed drives.

The IRF6723M2DTR1P has a low gate to source threshold voltage, allowing for low operating voltages and fast switching speeds. The device also has low input capacitance, which reduces switching time and reduces power dissipation. The array also has a low on-resistance, reducing power loss and increasing efficiency.

The IRF6723M2DTR1P is typically used in motor control and adjustable speed drives, as well as in automotive applications. It is also used in high frequency power conversion applications, such as uninterruptible power supplies (UPS). The array is suitable for communications, consumer, and industrial applications, as well as for power management applications.

In conclusion, the IRF6723M2DTR1P is an excellent choice for fast switching, low input capacitance, and low on-resistance applications. Its bi-directional normally-on feature allows for rapid switching between on and off states with low voltage levels. Its low gate to source threshold voltage, low input capacitance, and low on-resistance makes it ideal for motor control and adjustable speed drives, as well as for high frequency power conversion applications. The device is suitable for a variety of applications, including communications, consumer, and industrial applications, as well as for power management applications.

The specific data is subject to PDF, and the above content is for reference