| Allicdata Part #: | IRF6644TR1PBFTR-ND |
| Manufacturer Part#: |
IRF6644TR1PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 10.3A DIRECTFET |
| More Detail: | N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W... |
| DataSheet: |  IRF6644TR1PBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.8V @ 150µA |
| Package / Case: | DirectFET™ Isometric MN |
| Supplier Device Package: | DIRECTFET™ MN |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2210pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.3A (Ta), 60A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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IRF6644TR1PBF is a field effect transistor (FET) from International Rectifier\'s PowIR family of FETs. This device is designed for higher efficiency and power density applications, offering a maximum continuous drain current of 31 A at a 0.3 ohm typical RDS(on). It is a perfect choice for low voltage switched mode power supplies (SMPS) and other high efficiency power conversion circuits.
The IRF6644TR1PBF consists of a monolithic single N-channel enhancement mode power MOSFET. By providing an ohmic level gate controlled drain current path into an integrated Source with results in higher voltage ratings and lower on-resistances.
The IRF6644TR1PBF is a voltage-controlled device that relies on the application of a voltage to the gate terminal to control current flow between the source and drain terminals. The principle of operation is that by applying a voltage between the gate and source of a FET, a conducting channel is created between the source and drain. In this arrangement, current flows from the source to the drain when a voltage is applied to the gate. The magnitude of the current flow is a function of the applied gate-source voltage and the circuit resistance
The IRF6644TR1PBF offers a number of key features, including the ability to handle high current density and low on-state resistance for higher efficiency. The device is designed to run cool, with a typical thermal resistance of 0.8°C/W and an improved thermal shutdown threshold. It is designed to handle a wide range of input voltages, from 45 V to 500 V, making it a great choice for low voltage systems. The device is also AEC-Q101 qualified, making it suitable for automotive applications. In addition, the device is RoHS compliant, lead-free and halogen-free, making it an environmentally friendly choice.
The IRF6644TR1PBF offers both enhanced performance and improved reliability compared to previous generations of FETs, making it an ideal choice for many high-power applications. This device is particularly well-suited for use in applications such as switching power supplies, motor controllers and DC-DC converters. Other applications include electric vehicles, photovoltaics, Inverters, renewable energy storage, lighting, industrial inverters and solid state relays.
In conclusion, the IRF6644TR1PBF is a great choice for applications requiring high efficiency, high power density, and a wide range of input voltages. The device offers performance that is superior to previous generations of FETs, along with the added reliability and compliance with key standards such as AEC-Q101 and RoHS.
The specific data is subject to PDF, and the above content is for reference
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