IRF6617TR1

Vgs(th) (Max) @ Id:	2.35V @ 250µA
Package / Case:	DirectFET™ Isometric ST
Supplier Device Package:	DIRECTFET™ ST
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8.1 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta), 55A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRF6617TR1 is a type of field-effect transistor (FET) or MOSFET, specifically a single N-Channel enhancement-mode power MOSFET. It is commonly used in various applications, including audio systems, voltage regulaters, digital switching circuits, line drivers and amplifier circuits. This type of FET is an enhancement-mode device, meaning that it can be turned on and off by applying a voltage threshold. In other words, the device will not turn off until the power exceeds its threshold voltage. This is different than depletion-mode devices, which are always \'on\', and need to have their voltage raised to a threshold before they turn on. The IRF6617TR1 has a maximum drain-source current (Id) of 9.0A, and an on-state drain-source resistance (RDS(on)) of 0.034 Ohms. This means that it is capable of providing high electrical power and current in small packages. The IRF6617TR1 has several other characteristics that make it suitable for certain applications. It has a low gate charge (Qg) (16nC), a low gate-source threshold voltage (VGS(th)) (-2.1V) and a low drain-source capacitance (Coss) (0.0095pF). This means that this type of FET is capable of rapidly switching on and off, which is ideal for application systems that require very high speeds. In terms of packaging, the IRF6617TR1 is presented in a TO-220F innovative plastic packaging, with tab up orientation. This kind of fabrication provides low thermal resistance in the device and gives it a low profile with thermal stability and dissipates heat efficiently. The IRF6617TR1 is also used in voltage-controlled oscillators (VCOs). VCOs are circuits that produce a frequency that can be changed through the application of voltage. The MOSFET is used to control the oscillations of the voltage, allowing the device to operate over a wide range of frequencies.In summary, the IRF6617TR1 is a type of field-effect transistor (FET) or MOSFET that is commonly used for various applications, such as audio systems, voltage regulaters, digital switching circuits, line drivers and amplifier circuits. It is an enhancement-mode device, which can be turned on and off by applying a voltage threshold, and it has a maximum drain-source current (Id) of 9.0A and an on-state drain-source resistance (RDS(on)) of 0.034 Ohms. It also has low gate charge, a low gate-source threshold voltage and a low drain-source capacitance, which makes it suitable for high-speed applications, as well as packaging in TO-220F innovative plastic packaging, with tab up orientation. Additionally, the IRF6617TR1 is also used in voltage-controlled oscillators (VCOs) to control the frequency of the oscillations.

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