IRF6811STR1PBF

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IRF6811STR1PBF is a N-Channel enhancement mode power field effect transistor with an enhanced-power MOSFET. It is a high-density, low-voltage MOSFET specially designed for automotive applications. It has a breakdown voltage of 400V and a drain-source on-resistance of 24 mΩ at 4.5V. IRF6811STR1PBF features a wide-angle linear current path that reduces losses and provides high output current performance. The deviceis specifically designed for automotive electronic device efficiency, reliability and heat dissipation.

Application Field

IRF6811STR1PBF is ideal for automotive applications such as DC-DC converters, power supplies, DC-AC inverter and solar systems. It can also be used in LED lighting control, battery management systems, automotive engine control and traction systems. The device is also suited for various consumer and industrial applications such as home appliances and industrial machinery.

General Working Principle

The IRF6811STR1PBF is an N-Channel enhancement mode power field effect transistor. It utilizes an oxide field effect to modulate the conductivity of the device in order to regulate the current flow. The device can be switched on and off by applying a voltage to the gate terminal. When a voltage is applied to the gate, a thin layer of the oxide layer will form between the drain and source terminals, which allows the current to flow through the device, which then controls the drain-source current, or drain current. To turn the device off, the gate voltage should be removed, which will reverse the process and deactivate the device.

The device is usually operated in a region where it is partially "on" and partially "off". This is called the linear region, where the device can control the current very accurately, while still ensuring a low resistance. This is the typical operating mode of the device, as it is intended to be used to regulate the current in a linear fashion.

The MOSFET has a limited number of very small components. It is made up of a body structure that houses a source and drain, with an electrode connected to each and a gate electrode in the middle, which is connected to an insulation layer that separates the source and drain. These components are responsible for the MOSFET operation, as the gate voltage provides the necessary control of the device.

The IRF6811STR1PBF is a low power MOSFET, designed for specific applications where very low power loss is a requirement. It can provide excellent efficiency performance, reliability and heat dissipation for automotive applications.

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