IRF6215S Allicdata Electronics
Allicdata Part #:

IRF6215S-ND

Manufacturer Part#:

IRF6215S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 150V 13A D2PAK
More Detail: P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surfa...
DataSheet: IRF6215S datasheetIRF6215S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF6215S is a high-speed MOSFET (metal-oxide-semiconductor field-effect transistor). It is most commonly used in switching power supplies, like AC-DC converters and DC-DC converters. It is designed with an N-channel structure, meaning that electrical current flows through a conductive channel in the device when the gate voltage is applied. This MOSFET is designed to be used at frequencies up to 500 kHz, making it ideal for pulsed load applications where high-speed switching is required. The IRF6215S is also capable of operating at high switching frequencies with short delays and low RDS(on) values.

The maximum drain current that can be handled by the IRF6215S is 19A, with a maximum drain-source voltage rating of 100V. The gate-source voltage is limited to a maximum of 12V. The device is also capable of handling peak current up to 160A. The on-resistance (or RDS(on)) of the IRF6215S is low, typically ranging from 2.8 to 3.1 ohms.

The working principle of an IRF6215S is relatively simple. When a positive voltage is applied to the gate of the device, electrons in the N-Channel are attracted towards the gate, creating a conducting channel. This channel then allows current to flow between the source and the drain of the MOSFET.

In order to turn off the device, the gate voltage is lowered and the electrons in the channel are repelled away from the gate. This breaks the channel and stops the current flow between the source and the drain. By carefully controlling the voltage applied to the gate, the IRF6215S can be used to effectively and accurately control the current flowing between the source and drain.

The IRF6215S is also capable of functioning as an amplifier. By varying the gate voltage, the gain of the device can be controlled and this can be used to amplify signals. The device also has a high frequency response due to its internal capacitance, meaning it can be used for RF applications.

The IRF6215S is a versatile and reliable MOSFET. It is suitable for use in numerous applications where the need for a fast-switching device is required. The device has a low RDS(on) value and high current-handling capabilities, making it ideal for high-power switching applications. As well as this, it can also be used as an amplifier with its high-frequency response and power gain capabilities. Overall, the IRF6215S is an ideal choice for a variety of applications that require an effective and reliable switch.

The specific data is subject to PDF, and the above content is for reference

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