IRF630NSTRLPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	82W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	575pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	300 mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.3A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRF630NSTRLPBF Application Field and Working Principle

IRF630NSTRLPBF is a transistor component commonly found in electronics. It is a type of Field Effect Transistor (FET) classified as a MOSFET – Metal Oxide Semiconductor Field Effect Transistor – and is a type of single-gate model. It has many applications in everyday electronic devices, including computers, tablets, phones and music players. This component is most commonly used for switching and amplifying electronic signals.

Overview

The IRF630NSTRLPBF component is a three-terminal device composed of n-channel silicon and an insulated gate. It has an operating temperature range of -55°C to 125°C and is composed of a drain, a source and a gate. It has an average power dissipation of 500mW, a drain-source voltage (VDS) of 500V and a drain-source current (ID) of 8A.

Working Principle

The IRF630NSTRLPBF component works through the application of a gate voltage to the gate (G) terminal. When an external voltage is applied to the gate (G) terminal, it creates an electrostatic field which modulates the conductivity of the drain-source pathway, causing the transistor to switch ON or OFF. When ON, the transistor acts as a switch and allows current to flow through the drain-source pathway. This current is driven by the voltage applied to the source and the opposite voltage applied to the drain, allowing the MOSFET to act as a voltage-controlled resistor. This is known as the "on" resistance. When OFF, the MOSFET does not allow any current to pass through and acts as an "open switch”, blocking the drain-source circuit. This is known as the "off" resistance.

Applications

IRF630NSTRLPBF components are employed in a variety of consumer electronics. It is frequently used in mobile phones, music players, televisions, and other consumer products. It is suitable for applications requiring low power operation and low voltage operation, such as switching and amplifying signals. It can also be used in applications requiring high current capacity, such as power supplies, motor control, and motor drives. Additionally, IRF630NSTRLPBF components are often used as a part of amplifiers, as they are capable of amplifying power with high efficiency. Additionally, they can be used in switching applications, as they can control signals with high precision, and low distortion.

Conclusion

In conclusion, the IRF630NSTRLPBF transistor is a type of FET transistor, classified as a MOSFET – Metal Oxide Semiconductor Field Effect Transistor – and is a type of single-gate model. It is composed of a drain, a source and a gate and has an operating temperature range of -55°C to 125°C. It is most commonly used for switching and amplifying electronic signals and is found in many consumer electronic devices, such as mobile phones, music players, televisions and other consumer products. It can also be used for high current applications such as power supplies, motor control and motor drives, as well as amplifying signals. Overall, the IRF630NSTRLPBF transistor is a highly versatile component and is a vital part of many consumer electronics.

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