IRF6618

Vgs(th) (Max) @ Id:	2.35V @ 250µA
Package / Case:	DirectFET™ Isometric MT
Supplier Device Package:	DIRECTFET™ MT
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5640pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta), 170A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF6618 Application Field and Working Principle

The IRF6618 is a high power metal oxide field effect transistor (MOSFET) with a high shielding capability. Specifically, it is a 65V and 30A N-channel HEXFET power MOSFET with a package outline of TO-220AB. It is specifically designed for use in various power management applications such as DC to DC converters and high power and current applications.

Applications of IRF6618

The IRF6618 is used for various applications due to its reliable performance and features such as fast switching, low gate charge and low thermal resistance. Applications where it can be used include

• DC to DC conversion.
• Power regulators.
• Motor drivers.
• Switched mode circuit.
• Lead acid battery chargers.
• High current applications.

Features of IRF6618

The IRF6618 offers several features that make it suitable for a variety of applications including:

• High blocking voltage of 65V.
• High current rating (30A).
• Low drain to source on-state resistance.
• Low capacitance between drain-source and gate-source.
• Low gate charge for fast switching.
• Low body diode reverse recovery time.

Working Principle of IRF6618

The IRF6618 is a low-power N-channel MOSFET (metal-oxide field effect transistor). A MOSFET is an insulated gate FET with a dielectric gate oxide layer between the gate and channel. This layer acts as an insulator, preventing current from flowing through the channel. The gate voltage, rather than the current in the channel, controls the source-to-drain current in the device. When a positive voltage is applied to the gate, a current called the inversion current flows across the gate oxide. This inversion current modulates the electrons in the channel to create a channel in the channel. The repelling force between electrons and the positive gate voltage creates a region of low resistance in the channel-source-gate region, allowing current to flow when a positive gate voltage is applied.The gate-source voltage (Vgs) indicates whether the MOSFET is in an ‘on’ or ‘off’ state. Above a certain threshold voltage (Vth) the MOSFET turns ‘on’ and the current starts to flow. At a very low drain-source voltage (Vds) the MOSFET is in its linear region of operation, where an increase in the drain-source voltage results in a linear increase in the current for a given gate voltage. When the drain-source voltage exceeds a certain threshold (Vds(off) threshold voltage), the device enters into the saturation region and the current rises exponentially.In summary, the IRF6618 is a MOSFET with a high current rating and a high blocking voltage. It is used for various power management applications and offers features such as fast switching and low gate charge. Its working principle is based on the fact that a positive gate voltage creates a region of low resistance in the channel-source-gate region, which allows current to flow when a positive gate voltage is applied.

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