IRF614STRL Allicdata Electronics
Allicdata Part #:

IRF614STRL-ND

Manufacturer Part#:

IRF614STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 2.7A D2PAK
More Detail: N-Channel 250V 2.7A (Tc) 3.1W (Ta), 36W (Tc) Surfa...
DataSheet: IRF614STRL datasheetIRF614STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF614STRL is an N-Channel metal–oxide–semiconductor field-effect transistor (MOSFET) manufactured by International Rectifier (IR). It is a part of the firm’s PowerTrench product family. It can be used in various applications due to its excellent characteristics.

The primary operating characteristics of the IRF614STRL include VDSS (maximum voltage); ID (drain/source current); RDS(ON) (maximum on-state resistance); and gate-source voltage. These characteristics make it suitable for a range of digital switching, power amplification, and power supply applications.

The IRF614STRL is housed in a thermally enhanced TO-263AB package for efficient thermal transfer and cooling. It has a maximum junction temperature of 175 ⁰C. The device is also available in other package types including the TO-252, TO-220, and TO-220FP, depending on the application requirement.

The MOSFET operates in the depletion mode, meaning that it will be in the off-state when no voltage is applied to the gate. When a voltage is applied, the device can strengthen due to the formation of a channel between the source and drain terminals. As the gate voltage increases, so does the channel and the drain current.

The gain of the IRF614STRL is mainly determined by the gate-to-source voltage. Higher gate-to-source voltage results in a stronger channel, allowing greater drain current and greater gain. As the gate voltage continues to increase, the drain current will also continue to increase until it reaches its maximum drain-source voltage, at which point the device saturates.

The MOSFET is an efficient device due to its low gate-source leakage current. It also features good voltage and temperature stability, as well as excellent thermal performance. This makes it suitable for applications where high-efficiency and low heat dissipation are desired.

The IRF614STRL is designed to be particularly useful in DC/DC convertors, SMPSs (switched mode power supplies), and synchronous rectifiers. It is also suitable for Audio, automotive, and military applications as it features stabled and accurate switching. Lastly, it also finds applications in DC motors and drives, as well as in other power conversion applications.

In summary, the IRF614STRL is an excellent N-Channel MOSFET for various digital switching, power amplification, and power supply applications. It features a low gate-source leakage, good voltage and temperature stability, excellent thermal performance, and is available in a variety of packaging options. The device is capable of efficient power conversion and is suited for a range of applications, from DC/DC convertors and SMPSs to automotive and military applications.

The specific data is subject to PDF, and the above content is for reference

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