| Allicdata Part #: | IRF640NSPBF-ND |
| Manufacturer Part#: |
IRF640NSPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 18A D2PAK |
| More Detail: | N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2... |
| DataSheet: | IRF640NSPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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The IRF640NSPBF is a single-gated depletion-mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is a type of transistor, specifically a field-effect transistor (FET), which utilizes a voltage or electric field to control the flow of current. The IRF640NSPBF has a wide variety of applications and is typically used in power switching and amplifying applications. In this article, we will discuss the IRF640NSPBF’s application field and working principle.
IRF640NSPBF Application Field
The IRF640NSPBF is a versatile transistor and has multiple application fields, especially in power switching and amplifying applications. Some of the most common uses of the IRF640NSPBF include:
- Power switching applications: The IRF640NSPBF can be used in power switching applications such as DC-to-DC switching, as well as power MOSFET configurations.
- Amplifying applications: The IRF640NSPBF can also be used in amplifying applications, specializing in high-power audio amplifiers.
- Motor control applications: In motor control applications, the IRF640NSPBF is a popular choice as it has high maximum current ratings, making it suitable for high-power motor control circuits.
In addition, the IRF640NSPBF can be used in other various applications such as automotive applications, charging applications, and HVAC (heating, ventilation and air conditioning) applications, among others.
IRF640NSPBF Working Principle
The IRF640NSPBF is a depletion-mode MOSFET, meaning that it has high output resistance and low input resistance. This type of MOSFET is also known as an ‘enhancement-mode MOSFET’ and it works by controlling the drain-source current based on the gate-source voltage. When the gate-source voltage is negative, the drain-source current is cut off, producing a low-impedance between the drain and source. The IRF640NSPBF also has a very low on-state resistance, meaning that it can efficiently handle high currents.
The MOSFET also has a maximum rating of 60 volts and can be used in applications that require high voltages. The device is also capable of achieving temperatures as high as 175 °C and has an impressive power dissipation rating of 875 watts. This allows it to be used in high-power environments, such as power MOSFET configurations or motor control applications.
Conclusion
The IRF640NSPBF is a single-gated depletion-mode MOSFET and is an excellent choice for power switching and amplifying applications. It has a wide variety of applications and can be used in various environments, such as automotive applications, charging applications, and HVAC applications. It works by controlling the drain-source current based on the gate-source voltage and has an impressive power dissipation rating of 875 watts.
The specific data is subject to PDF, and the above content is for reference
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IRF640NSPBF Datasheet/PDF