| Allicdata Part #: | IRF6711STRPBF-ND |
| Manufacturer Part#: |
IRF6711STRPBF |
| Price: | $ 0.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 19A DIRECTFET-SQN-Channel 25V 19A ... |
| More Detail: | N/A |
| DataSheet: |  IRF6711STRPBF Datasheet/PDF |
| Quantity: | 973 |
| 1 +: | $ 0.69000 |
| 10 +: | $ 0.66930 |
| 100 +: | $ 0.65550 |
| 1000 +: | $ 0.64170 |
| 10000 +: | $ 0.62100 |
Specifications
| Series: | HEXFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 84A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 13V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DIRECTFET™ SQ |
| Package / Case: | DirectFET™ Isometric SQ |
| Base Part Number: | -- |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRF6711STRPBF has been used extensively in the electronics field as one of the leading metal-oxide-semiconductor field-effect transistors (MOSFETs). The MOSFET is one of the most important transistor structures in electronics, used in the design of digital and analog circuits. It’s very low power dissipation, high gate resistance and low gate-drain capacitance, which makes it suitable for use in high-frequency applications and it is also used for high-speed and low-
The specific data is subject to PDF, and the above content is for reference
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