IRF630STRRPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta), 74W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	400 mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRF630STRRPBF is a Field Effect Transistor (FET), specifically a metal oxide (MOSFET). It is a voltage-controlled, unipolar, power semiconductor device with a single Gate, suitable for use in a wide range of electronic components. This type of FETs is mainly used in power electronics applications such as motor drives, power converters, solar inverters and renewable energy grid applications.In power electronics applications, FETs are often used in pairs to form a half-bridge mains-powered connection. The electrical circuit comprising the pair of FETs is known as a half-bridge circuit. The IRF630STRRPBF is well-suited for such applications due to its superior performance and low on-resistance when compared with standard FETs. Additionally, the feature of low on-state resistance (Rds) makes it suitable for higher current applications such as motor drives and power converters.The IRF630STRRPBF can also be used in other types of applications. Its features make it highly suitable for low noise switching applications such as audio amplifiers and oscillators. Its low voltage triggering characteristics makes it suitable for load switching applications in consumer electronics products such as televisions, air-conditioners and set-top boxes. Additionally, the device is well suited for analog circuits applications such as piezo-actuators and voltage-controlled potentiometers.The principle of operation of the IRF630STRRPBF is based on the concept of junction capacitance. By varying the relative capacitance between the gate, the source and the drain, the current flow through the device can be controlled. The device has an inherent linear response due to its breakdown voltage and reverse conduction capability. This makes it suitable for applications requiring very precise control of power flow.When the Gate of the device is connected to ground, the junction capacitance is low. This results in a low voltage across the Drain and Source terminals and thus no current flow. Conversely, when the Gate of the device is connected to a positive voltage, the junction capacitance increases and the voltage across the Drain and Source terminals rises. Thus, a significant current flow is observed.The IRF630STRRPBF also has a thermal shut-down feature. This prevents the device from being damaged due to an excessive rise in temperature. The thermal shut-down feature comes into effect when the Drain-Source voltage exceeds the device’s maximum rating.The IRF630STRRPBF is essential in a wide range of electronic applications due to its excellent performance, low on-state resistance and thermal shut-down feature. It is an essential component of many power electronic designs and is well suited for use in a variety of low noise switching and load switching circuits. Its linear response and precise control of power flow make it ideal for highly reliable and efficient operation in power electronics applications.

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