IRF6797MTRPBF

Vgs(th) (Max) @ Id:	2.35V @ 150µA
Package / Case:	DirectFET™ Isometric MX
Supplier Device Package:	DIRECTFET™ MX
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5790pF @ 13V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	36A (Ta), 210A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to IRF6797MTRPBF

The IRF6797MTRPBF is a type of field effect transistor (FET). It is designed to provide a low on-resistance and is suitable for several power management applications, such as switching regulators, DC-DC converters, and motor control. The IRF6797MTRPBF is offered in a 30V, 8A single N-channel, through-hole MOSFET package.

Application Field of IRF6797MTRPBF

The IRF6797MTRPBF can be used for a wide range of applications including DC-DC converters, switching regulators, motor control, and other power management applications. Specifically, its low on-resistance and fast switching characteristics make it suitable for boosting the efficiency of DC-DC converters. It is well-suited for use in high-frequency applications due to its low capacitance and high switching frequency. Additionally, the IRF6797MTRPBF can be used in applications such as power factor correction, switch-mode power supplies, and power circuits in telecom, automotive and consumer electronics applications.

Working Principle of IRF6797MTRPBF

The IRF6797MTRPBF is a voltage-controlled FET. It operates by creating an inversion layer between the source and drain when the gate voltage is applied. An electron-depleted region is formed when a positive gate voltage is applied, which increases the conductivity from the source to the drain. When a negative gate voltage is applied, the inversion layer depletes, thus reducing the conductivity between the source and drain.The IRF6797MTRPBF offers faster switching speeds and reduced voltage drops due to its low on-resistance. This is achieved by using low junction capacitance. It also offers a lower threshold voltage and improved robustness due to its layout and design.The IRF6797MTRPBF is usually operated in the enhancement mode, meaning that a positive gate voltage is required to turn it on. It can also be operated in the depletion mode; however, this requires the application of a negative gate voltage to turn the device on.

Conclusion

The IRF6797MTRPBF is a single N-channel FET, designed for use in applications such as DC-DC converters, switching regulators, and motor control. It provides a low on-resistance and fast switching speeds, making it an ideal choice for power management applications. The device is offered in a through-hole package and can be operated in either the enhancement or depletion mode, depending on the application.

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