Allicdata Part #: | IRF9410-ND |
Manufacturer Part#: |
IRF9410 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 7A 8-SOIC |
More Detail: | N-Channel 30V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO |
DataSheet: | IRF9410 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9410 is a metal oxide semiconductor field-effect transistor (MOSFET) that is used in power applications such as power amplifiers, automatic motor control, and audio amplifiers. It is a single-ended device designed to operate at currents up to 12 A (dc) and continuous drain-to-source voltages up to 150V.
The IRF9410 is a depletion-mode MOSFET, meaning it has a negative flat-to-saturation region on its transfer curve. This means that it can handle large current changes with minimal gate input. It also has a low input capacitance, allowing it to switch quickly and efficiently. The low input capacitance also allows for better voltage regulation.
The IRF9410 is constructed from two layers of silicon: the source layer and the drain layer. The silicon is treated such that a thin gate oxide layer is formed across the top surface. When the gate is biased positively with respect to the source and drain, a depletion region is created between the top (gate) and bottom (source and drain) layers. As the gate voltage increases, the depletion region grows, effectively preventing current flow across the junction.
When the gate voltage is decreased, the depletion region shrinks, allowing current to flow across the junction. This current flow is controlled by the size and shape of the gate oxide layer, as well as the thickness and doping profile of the silicon layer. This allows for precise control of the current flow in the device.
The IRF9410 device is primarily used in power applications where large currents must be switched quickly and accurately. In audio amplifiers, it provides rapid switching of the output stage, allowing for dynamic range and improved sound quality. In motor control applications, its low input capacitance and rapid switching allow for precise control of both the speed and torque of the motor.
As a single-ended power device, the IRF9410 does not require additional circuitry for protection against electromagnetic interference. This makes it ideal for use in applications such as medical equipment, telecommunications, and power inverters. The device has a relatively low on-resistance and low gate charge, making it suitable for many switching and amplifier applications.
In addition to its use in audio and motor control applications, the IRF9410 can also be used in power converters and power factor correction circuits. As a depletion-mode MOSFET, the IRF9410 can be used as a low-side switch and has the ability to efficiently rectify or regulate DC voltages. Its low on-resistance and fast switching times make it a useful device for high-frequency power conversion circuits.
The IRF9410 is a powerful and versatile MOSFET that is well suited for many power applications. Its small size, low on-resistance, and low input capacitance make it a good choice for circuits where efficiency, speed, and accuracy are essential. In combination with other power devices and additional circuitry, the IRF9410 can be used to develop complex power control systems that meet the demanding requirements of today\'s power electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IRF9520NLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A TO2... |
IRF9Z30PBF | Vishay Silic... | 1.65 $ | 601 | MOSFET P-CH 50V 18A TO-22... |
IRF9540STRLPBF | Vishay Silic... | 0.99 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9Z14SPBF | Vishay Silic... | -- | 863 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24SPBF | Vishay Silic... | -- | 288 | MOSFET P-CH 60V 11A D2PAK... |
IRF9610SPBF | Vishay Silic... | -- | 425 | MOSFET P-CH 200V 1.8A D2P... |
IRF9383MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 22A DIREC... |
IRF9540NLPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 23A TO26... |
IRF9Z20PBF | Vishay Silic... | 1.51 $ | 88 | MOSFET P-CH 50V 9.7A TO-2... |
IRF9510 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A TO-22... |
IRF9630 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A TO-... |
IRF9640 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A TO-2... |
IRF9520 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 6.8A TO-... |
IRF9610 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A TO-... |
IRF9530 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A TO-2... |
IRF9620 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 3.5A TO-... |
IRF9540 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A TO-2... |
IRF9Z34 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 18A TO-22... |
IRF9Z14 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A TO-2... |
IRF9410 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 7A 8-SOIC... |
IRF9510S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A D2PAK... |
IRF9520NS | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9530NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 14A D2PA... |
IRF9530S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9540S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9610S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A D2P... |
IRF9620S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 3.5A D2P... |
IRF9630S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A D2P... |
IRF9640S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9640STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9Z14S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A TO-22... |
IRF9Z24NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 55V 12A D2PAK... |
IRF9Z24S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 11A D2PAK... |
IRF9Z24STRR | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A D2PAK... |
IRF9Z30 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 50V 18A TO-22... |
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