IRF9410 Allicdata Electronics
Allicdata Part #:

IRF9410-ND

Manufacturer Part#:

IRF9410

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 7A 8-SOIC
More Detail: N-Channel 30V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO
DataSheet: IRF9410 datasheetIRF9410 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF9410 is a metal oxide semiconductor field-effect transistor (MOSFET) that is used in power applications such as power amplifiers, automatic motor control, and audio amplifiers. It is a single-ended device designed to operate at currents up to 12 A (dc) and continuous drain-to-source voltages up to 150V.

The IRF9410 is a depletion-mode MOSFET, meaning it has a negative flat-to-saturation region on its transfer curve. This means that it can handle large current changes with minimal gate input. It also has a low input capacitance, allowing it to switch quickly and efficiently. The low input capacitance also allows for better voltage regulation.

The IRF9410 is constructed from two layers of silicon: the source layer and the drain layer. The silicon is treated such that a thin gate oxide layer is formed across the top surface. When the gate is biased positively with respect to the source and drain, a depletion region is created between the top (gate) and bottom (source and drain) layers. As the gate voltage increases, the depletion region grows, effectively preventing current flow across the junction.

When the gate voltage is decreased, the depletion region shrinks, allowing current to flow across the junction. This current flow is controlled by the size and shape of the gate oxide layer, as well as the thickness and doping profile of the silicon layer. This allows for precise control of the current flow in the device.

The IRF9410 device is primarily used in power applications where large currents must be switched quickly and accurately. In audio amplifiers, it provides rapid switching of the output stage, allowing for dynamic range and improved sound quality. In motor control applications, its low input capacitance and rapid switching allow for precise control of both the speed and torque of the motor.

As a single-ended power device, the IRF9410 does not require additional circuitry for protection against electromagnetic interference. This makes it ideal for use in applications such as medical equipment, telecommunications, and power inverters. The device has a relatively low on-resistance and low gate charge, making it suitable for many switching and amplifier applications.

In addition to its use in audio and motor control applications, the IRF9410 can also be used in power converters and power factor correction circuits. As a depletion-mode MOSFET, the IRF9410 can be used as a low-side switch and has the ability to efficiently rectify or regulate DC voltages. Its low on-resistance and fast switching times make it a useful device for high-frequency power conversion circuits.

The IRF9410 is a powerful and versatile MOSFET that is well suited for many power applications. Its small size, low on-resistance, and low input capacitance make it a good choice for circuits where efficiency, speed, and accuracy are essential. In combination with other power devices and additional circuitry, the IRF9410 can be used to develop complex power control systems that meet the demanding requirements of today\'s power electronics.

The specific data is subject to PDF, and the above content is for reference

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