Allicdata Part #: | IRF9Z24STRR-ND |
Manufacturer Part#: |
IRF9Z24STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 11A D2PAK |
More Detail: | P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface... |
DataSheet: | IRF9Z24STRR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF9Z24STRR is a single-gate field effect transistor (FET) manufactured by Infineon. It is designed with a N-channel to use in power management and load switching applications. The IRF9Z24STRR is typically used to control the switching of an electrical device, such as an AC load or power converter. It is also used in a variety of industrial, automotive, and consumer electronic applications.
The IRF9Z24STRR is composed of two different types of materials: a source and a drain, both of which are made from a semiconductor material. The source and the drain are connected to control a voltage or a current. The source and the drain are connected to a substrate material that is composed of an insulating material, making it difficult for the electrons to move through the substrate material. A gate is also connected to the substrate material, and when the gate receives a certain voltage, it will allow the electrons to flow through the substrate material to the source and drain.
The working principle of the IRF9Z24STRR is based on the principle of field effect transistor (FET) technology. When the gate voltage is applied to the IRF9Z24STRR, it will form an electric field between the source and the drain, which will in turn cause electrons to be attracted by the gate and be moved through the source and drain to form a current. The current will continue to flow until the device is turned off. By controlling the gate voltage, the IRF9Z24STRR can be used to control the current flow between the source and the drain. This makes the IRF9Z24STRR a suitable device for controlling a wide variety of electrical applications.
The IRF9Z24STRR is commonly used in scenarios that require controlling a high power load, such as those found in industrial and consumer electronic applications. It is also used to switch the voltage and current in converters, such as in an AC/DC converter. The IRF9Z24STRR is also used as an electrical isolator, as it can be used to control the power and voltage applied to a circuit. Finally, IRF9Z24STRR can be used as a way to control a large current so that a sudden surge in current does not damage the device.
In conclusion, the IRF9Z24STRR is a single-gate FET that can be used in a variety of power management and load switching applications. It works by controlling the current flow between the source and the drain using a gate voltage. The IRF9Z24STRR is typically used in industrial and consumer electronic applications, as an electrical isolator, and as a way to control a large current.
The specific data is subject to PDF, and the above content is for reference
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