Allicdata Part #: | IRF9620SPBF-ND |
Manufacturer Part#: |
IRF9620SPBF |
Price: | $ 1.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 3.5A D2PAK |
More Detail: | P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface... |
DataSheet: | IRF9620SPBF Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.90240 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF9620SPBF is an N-channel MOSFET with high voltage capability and the integrated dynamic dV/dT enhancement. It is designed to provide superior performance with very low gate charge and Rds(on). It is available in three circuit configurations – single, dual and quad.
IRF9620SPBF is a great choice for systems that require higher voltage capability, extremely small form factor, and fast switching capabilities. The device has excellent power performance having an applications rating up to 50 V and a maximum drain current of 3 A. It also offers a low on-resistance (Rds on) of 0.012Ω. The device is especially suitable for the applications requiring higher voltage ratings, excellent high-frequency performance, and low gate charge.
In addition to its superior performance, the IRF9620SPBF offers superior stability and reliability. It has been designed for enhanced durability and long-term stability. The device is made with advanced parallel gate technology which increases the temperature coefficient of gate resistance and pulse current immunity. The device also features improved avalanche capability which enables the device to withstand higher voltage and power loads.
The IRF9620SPBF is used in various application fields such as audio amplifiers, audio switching and multiplexers, automotive systems, high speed switching and conversion, EMI filtering, polarity protection, battery power supplies, and power management.
The working principle of the IRF9620SPBF is relatively simple. It consists of two back to back N-channel MOSFETs which are controlled by the Gate to source voltage. When the gate voltage reaches a certain level, the MOSFETs become conductive and start to switch the load currents. Its dynamic dV/dT enhancement feature increases the voltage rating of the device when switching applications.
The IRF9620SPBF offers a unique competitive advantage over other MOSFETs. It has a low on-resistance (Rds on) and excellent switching frequency performance. Furthermore, the device is also available in different chip package configurations and a wide range of operating temperatures. All these advantageous features make the device suitable for various applications.
In conclusion, IRF9620SPBF is an excellent choice for high voltage applications requiring fast switching capabilities, and low on-resistance (Rds on). The device is available in three circuit configurations – single, dual and quad, and is also suitable for audio amplifiers, audio switching, multiplexers, automotive systems and many other applications. The working principle of the device is simple and it also offers excellent power performance and enhanced stability and reliability.
The specific data is subject to PDF, and the above content is for reference
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