Allicdata Part #: | IRF9Z14LPBF-ND |
Manufacturer Part#: |
IRF9Z14LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 6.7A TO-262 |
More Detail: | P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Throug... |
DataSheet: | IRF9Z14LPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF9Z14LPBF is a newly developed single N-channel enhancement mode Field Effect Transistor (FET). It is part of Infineon\'s Power MOSFET family, characterized by its high performance in switching and low on resistance. This device is designed for applications where high current, speed and low power dissipation are essential.
The IRF9Z14LPBF power MOSFET is offered as a P-channel device with an on-resistance of 14 mOhm at 10V, an RDS(ON) of 17 mOhm at 25V and a total gate charge (Qg) of 97 nC. It is packaged in the SOT-223L-3L package, which is RoHS compliant and allows users to obtain a large number of devices with good thermal dissipation properties.
IRF9Z14LPBF operates in two modes: enhancement and depletion. In enhancement mode, the transistor acts as an electric switch, turning on and off when a voltage is applied to the gate. When the voltage is raised past the transistors threshold VGS(TH) it will turn on, conducting current from drain to source. In depletion mode however, the MOSFET will turn off and stop conducting when the threshold voltage is reached.
Due to its high level of efficiency, the IRF9Z14LPBF power MOSFET can be used in a wide range of applications, such as motor controls, DC-DC converters, and other power management solutions. It is also suitable for use in DC loads, switching and amplifying circuits, and in instrumentation amplifiers. In addition to its fast switching speeds and low on resistance, the device also features a minimum assured matching between RDS(ON) and Qg values, ensuring reliability and stability in harsh conditions.
The IRF9Z14LPBF offers several advantages over other power MOSFETs. It operates with a wide gate-source voltage range, allowing it to be used in multiple applications. It also has a low gate charge and a low RDS(ON) for improved efficiency and lower power loss. Finally, this device has a built-in diode for overvoltage protection, reducing the need for external protection circuitry.
In summary, the IRF9Z14LPBF Power MOSFET is designed to offer superior performance and long-term reliability. It features a low on resistance and low gate charge combined with fast switching speeds, allowing it to be used in a wide range of applications. The device also features a built-in diode for overvoltage protection, ensuring reliable operation in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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