IRFP264PBF Allicdata Electronics
Allicdata Part #:

IRFP264PBF-ND

Manufacturer Part#:

IRFP264PBF

Price: $ 3.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 38A TO-247AC
More Detail: N-Channel 250V 38A (Tc) 280W (Tc) Through Hole TO-...
DataSheet: IRFP264PBF datasheetIRFP264PBF Datasheet/PDF
Quantity: 1000
1 +: $ 3.40000
10 +: $ 3.29800
100 +: $ 3.23000
1000 +: $ 3.16200
10000 +: $ 3.06000
Stock 1000Can Ship Immediately
$ 3.4
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 75 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFP264PBF is a high-current MOSFET designed for switching applications. Its surface-mount package and robust construction make it a popular choice for power applications. In this article, we will discuss the application field and working principle of this device.

The IRFP264PBF is a single-pole double-throw (SPDT) MOSFET designed for switching applications. Its low on-state resistance, high current handling capacity, and low switching losses make it well suited for applications that require high power switching. Additionally, its high drain-source breakdown voltage makes it suitable for high-voltage power supply designs.

The IRFP264PBF is best suited for applications such as motor control, switch mode power supplies, high power amplifiers, DC/DC converters, and inverters. It is also used in many industrial and automotive applications, such as lighting control, motor starters, inverter systems, and solar power systems.

The IRFP264PBF is a N-channel MOSFET, meaning the current flows from the drain to the source when it is in saturation mode. The device is designed using an advanced process that is capable of achieving both large current capacity and low-on resistance.

The device operates in two main modes: cutoff and saturation. In cutoff mode, the gate-to-source voltage (VGS) is less than the drain-to-source voltage (VDS). In saturation mode, the VGS exceeds the VDS, allowing current to flow from the source to the drain. The device is also capable of operating in linear mode, where a linear voltage/current relationship exists between the source/drain in addition to the on/off switching ability.

The drain-source breakdown voltage (BVdss) rating of the IRFP264PBF is 55V. This is the voltage level at which the device stops conducting and prevents current from flowing through. The maximum drain-source voltage (VDS) is the maximum voltage that can be applied to the drain or source of the device. In the case of the IRFP264PBF, the maximum VDS is 55V as well.

The IRFP264PBF can handle high currents when in saturation mode. The device has a maximum continuous drain current rating of 15A, and a maximum peak pulse current of 68A. This makes it well suited for high power applications that require high current and low on-resistance. The device can also handle large amounts of power, with a maximum power continuous device dissipation (PD) of 175W.

In addition to its power handling capabilities, the device has low gate-to-source capacitances, which are important for fast switching times. The total capacitance is just 9.7pF, with a drain-to-source capacitance of 3.2pF. This means that the device can switch quickly, allowing it to be used in high-frequency switching applications.

Overall, the IRFP264PBF is a highly capable device with a wide range of applications. It can handle large currents and voltages, switch quickly, and dissipate large amounts of power. It is suitable for high-power switching applications, such as motor control, DC/DC converters, and high-power amplifiers. Additionally, its robust construction and surface-mount package make it a popular choice for power applications.

The specific data is subject to PDF, and the above content is for reference

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