Allicdata Part #: | IRFP4368PBF-ND |
Manufacturer Part#: |
IRFP4368PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 195A TO-247AC |
More Detail: | N-Channel 75V 195A (Tc) 520W (Tc) Through Hole TO-... |
DataSheet: | IRFP4368PBF Datasheet/PDF |
Quantity: | 4249 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 520W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 19230pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 570nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.85 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFP4368PBF is a type of power MOSFET commonly used in power amplifiers and other applications. It is a high-voltage, high-current type N-channel insulated gate bipolar transistor (IGBT) with an internal source-drain diode. This device is capable of handling currents of up to 220Amps and can be used in applications that require high power handling such as power amps and audio amplifiers. As a result, it has become a popular choice for many applications, from motor controllers to power supplies.
The IRFP4368PBF has a number of features that make it an ideal choice for many applications. It is capable of handling extremely high currents with low resistance and has excellent thermal stability, which is a key requirement for many power amplifiers. The device also features an internally doped N-channel junction, which makes it highly rugged and tolerant of transient voltage spikes. This makes it a good choice for applications handling large power swings or spikes.
The working principle of the IRFP4368PBF is based on the principle of p-n junctions. When voltage is applied, a gate voltage causes a large electric field to be created between the gate and the substrate. This electric field causes electrons to flow from the substrate to the gate, creating a conductive channel between the two. As current is driven through the device, it acts as a switch and can be used to control the flow of current. This type of transistor is typically used in applications where high current switching is required.
When used in power amplifier applications, the device is placed in between the input and the output to control the amount of power transferred. In this way, it acts as a variable resistor that can be adjusted to produce the desired effect. It is also used to attenuate signals and reduce noise. The MOSFET is capable of amplifying audio signals as well as providing a means to control the speed of servo motors and other devices.
The IRFP4368PBF is a reliable and efficient solution for many applications. It is highly stable, strong, and capable of handling extreme power levels. Additionally, it features a low input and output capacitance, which helps reduce losses. Its high-voltage feature also helps to reduce switching losses, making it an ideal choice for many applications. Because of its many advantages, the IRFP4368PBF is commonly used in a range of power amplifiers, motor controllers, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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