| Allicdata Part #: | IRFP450NPBF-ND |
| Manufacturer Part#: |
IRFP450NPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 14A TO-247AC |
| More Detail: | N-Channel 500V 14A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: |  IRFP450NPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 370 mOhm @ 8.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IRFP450NPBF is a power MOSFET n-channel transistor with a maximum drain-source voltage of 150V, a drain-source on-state resistance of 0.005 Ohms and a frequency of 1MHz. This high-efficiency MOSFET is suitable for applications in motor control, audio power amplifiers, power supplies, switching regulators and various other power applications.
The IRFP450NPBF is a metal-oxide-semiconductor field-effect transistor (MOSFET) that operates by having the gate-source voltage and drain-source voltage connected in order to create an electrical field. This electrical field creates a channel between the drain and source. The size of the channel is determined by the gate voltage, and this field is what’s responsible for controlling the current flow between the drain and source.
The gate of the IRFP450NPBF can be driven by an external voltage source to control the drain-source current and the on-state resistance of the MOSFET. This makes the MOSFET ideal for switching and linear applications including motor control, power conversion, and audio power amplifiers, as well as AC and DC motor control.
The IRFP450NPBF is designed for use in high switching frequency applications with high current requirements. It has an area of 0.8 x 1mm and can handle peak currents up to 12A. The maximum limit of drain-source voltage is 150V. It also has a typical gate charge of 11nC and a gate-source capacitance of 250pF.
The IRFP450NPBF can also be used in linear applications such as power supplies and switching regulators. It has low total gate charge, enabling good efficiency and high-current capability, making it ideal for high-power applications.
The IRFP450NPBF is well-suited for use in applications where efficiency is important. It has a low on-state resistance that allows it to conduct current efficiently, which is beneficial for applications where power consumption is a concern.
In conclusion, the IRFP450NPBF is an ideal solution for a variety of applications including motor control, audio power amplifiers, power supplies, and switching regulators. Its high performance and low on-state resistance make it an efficient option for any application.
The IRFP450NPBF is a metal-oxide-semiconductor field-effect transistor (MOSFET) that operates by having the gate-source voltage and drain-source voltage connected in order to create an electrical field. This electrical field creates a channel between the drain and source. The size of the channel is determined by the gate voltage, and this field is what’s responsible for controlling the current flow between the drain and source.
The gate of the IRFP450NPBF can be driven by an external voltage source to control the drain-source current and the on-state resistance of the MOSFET. This makes the MOSFET ideal for switching and linear applications including motor control, power conversion, and audio power amplifiers, as well as AC and DC motor control.
The IRFP450NPBF is designed for use in high switching frequency applications with high current requirements. It has an area of 0.8 x 1mm and can handle peak currents up to 12A. The maximum limit of drain-source voltage is 150V. It also has a typical gate charge of 11nC and a gate-source capacitance of 250pF.
The IRFP450NPBF can also be used in linear applications such as power supplies and switching regulators. It has low total gate charge, enabling good efficiency and high-current capability, making it ideal for high-power applications.
The IRFP450NPBF is well-suited for use in applications where efficiency is important. It has a low on-state resistance that allows it to conduct current efficiently, which is beneficial for applications where power consumption is a concern.
In conclusion, the IRFP450NPBF is an ideal solution for a variety of applications including motor control, audio power amplifiers, power supplies, and switching regulators. Its high performance and low on-state resistance make it an efficient option for any application.
The specific data is subject to PDF, and the above content is for reference
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