IRFPG50PBF Allicdata Electronics
Allicdata Part #:

IRFPG50PBF-ND

Manufacturer Part#:

IRFPG50PBF

Price: $ 3.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 1000V 6.1A TO-247AC
More Detail: N-Channel 1000V 6.1A (Tc) 190W (Tc) Through Hole T...
DataSheet: IRFPG50PBF datasheetIRFPG50PBF Datasheet/PDF
Quantity: 145
1 +: $ 3.53000
10 +: $ 3.42410
100 +: $ 3.35350
1000 +: $ 3.28290
10000 +: $ 3.17700
Stock 145Can Ship Immediately
$ 3.53
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFPG50PBF is a vertical single N-type MOSFET which belongs to the Power MOSFET series. It is designed for applications where high-current power switching is required. It is widely used in a variety of industrial, commercial, and consumer applications ranging from automotive engine control to industrial lighting and from consumer power tools to home appliances.

The IRFPG50PBF is a low-capacitance device that is rated for 50V drain-source voltage and 140A continuous drain current. It is capable of withstanding high-temperature operation and has a good power efficiency. It is capable of operating at a low and medium switching frequency and has low gate charge.

The active region of the IRFPG50PBF contains two transistors, an N-channel transistor and a P-channel transistor, and it is these two transistors that form the MOSFET. The N-channel transistor has an N-type gate, while the P-channel transistor has a P-type gate. Both transistors are connected in parallel and form a junction between the drain and source terminals.

When the gate voltage of the MOSFET is low, the N-channel transistor is off and the P-channel transistor is on, causing the drain-source voltage to drop to zero as the current flow is blocked. When the gate voltage of the MOSFET is high, the N-channel transistor is on and the P-channel transistor is off, allowing the current to flow from the drain to the source. This allows the current to flow from drain-to-source, allowing a controlled switching action.

The IRFPG50PBF is used in various applications such as motor control, power amplifiers, speed control, and more. It is often used in automotive applications due to its excellent stability, high switching speed, and low gate charge. Motor control applications are a popular use of the IRFPG50PBF as it is capable of controlling the speed of a motor quickly and accurately. It can also be used in power amplifiers to amplify signals, allowing for higher power output.

The IRFPG50PBF is also widely used in consumer electronics, such as consumer power tools, home appliances, and consumer lighting. It is a versatile, efficient, and reliable device that can be used for a variety of consumer applications. It is especially suitable for consumer applications due to its low gate charge and low static power, making it an economically attractive choice for consumer electronics.

In conclusion, the IRFPG50PBF is a powerful and efficient device that can be used in a variety of applications. It has a low gate charge, high switching speed, and excellent stability, making it an ideal choice for applications where high-current power switching is required. Its low static power and low gate charge make it an attractive choice for consumer electronics and it is also a popular choice for industrial motor control applications.

The specific data is subject to PDF, and the above content is for reference

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