IRFU1N60A Allicdata Electronics
Allicdata Part #:

IRFU1N60A-ND

Manufacturer Part#:

IRFU1N60A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 1.4A I-PAK
More Detail: N-Channel 600V 1.4A (Tc) 36W (Tc) Through Hole TO-...
DataSheet: IRFU1N60A datasheetIRFU1N60A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFU1N60A is a type of General-Purpose MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) developed and manufactured by International Rectifier. It is classed as a Single N-Channel enhancement-mode, offering over-voltage protection, and is intended for use mainly in high-side switching, power supply and DC-DC converter applications.

The IRFU1N60A is a low on-resistance (< 0.72 Ohm) MOSFET produced using the Advanced Planar Stripe (APS) technology. This technology has a number of advantages, including low gate charge, low input capacitance, low switching losses and fast switching speeds.

The IRFU1N60A is made with a high-voltage avalanche capability (1kV) and can operate up to a voltage of 500V. The chip has a drain to source breakdown voltage of 600V (min) and an on-resistance of 0.72 Ohm at a 4.5V Gate-Source voltage. Due to its high efficiency, the chip has a maximum collector dissipation of 0.7 W at 25°C. In addition, its maximum operating temperature range is -55°C to +150°C.

The IRFU1N60A is composed of a MOSFET body, source and drain electrodes, gate electrode, and gate dielectric. Its general working principle is as follows. The Gate electrode is positively charged, causing electrons to accumulate at the Drain electrode, creating an electron field. This electric field is thereafter increased due to a voltage applied to the Gate electrode, allowing the current to flow from the Source to the Drain electrode. This current is regulated by the Gate voltage.

The source to drain current passing through the IRFU1N60A can be controlled in a number of ways. These include Pulse Width Modulation (PWM) mode, which is through a linear voltage control, and linear speed control mode, which is through a resistor network. Other methods of controlling the MOSFET current include by using an Analog Control Signal and an external voltage source. This ensures that the desired current is maintained throughout the circuit.

The IRFU1N60A is used mainly in high-side switching, power supply and DC-DC converter applications such as USB chargers, power supply circuits, battery charging circuits, motor control systems, and in a variety of industrial applications. It is extremely suitable for these applications due to its low on-resistance and high-efficiency. In addition, it is also one of the most cost-effective solutions for industrial applications that require low on-resistance, high-voltage and reliable performance.

Overall, the IRFU1N60A is a pratical and effective power source applications. Its ability to regulate the source to drain current is highly reliable and suitable for a variety of industrial and high side switching applications. Its cost-effectiveness and easy to use solutions for these applications make it an ideal and reliable choice.

The specific data is subject to PDF, and the above content is for reference

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