Allicdata Part #: | IRFU9120PBF-ND |
Manufacturer Part#: |
IRFU9120PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 5.6A I-PAK |
More Detail: | P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Throu... |
DataSheet: | IRFU9120PBF Datasheet/PDF |
Quantity: | 137 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRFU9120PBF is a transistor which is based on the field effect transistor (FET). It is one of the most common types of transistors which is widely used in various applications.
It is a single N-channel, depletion-mode type, along with a TO-220 (E-Line) package. This product has been designed and manufactured by Infineon Technologies AG, which is a German semiconductor manufacturer.
The IRFU9120PBF can be used in a variety of applications and is suitable for a wide range of power consumption solutions. Because of its low-on-resistance, low-power consumption and fast switching, it is a great choice for uses such as logic level converters, high-side switching, switching regulators and low-side switching.
The IRFU9120PBF is based on the principle of the metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a type of transistor that uses a semiconductor material as the gate insulator between the gate and the body. The semiconductor material used is usually silicon oxide, although other materials such as gallium arsenide can also be used.
The working principle of the IRFU9120PBF is fairly simple. The source and drain electrodes, which are connected to the body of the device, allow electrons to flow through the semiconductor layer. By applying a voltage to the gate, the electrons are forced to travel through a very narrow channel, which allows for very precise control of the flow of electrons. This control of the current flow is what makes the IRFU9120PBF such a useful device for many applications.
In addition, the IRFU9120PBF can also be used in applications that require high-current, such as lighting control, motor control, and audio power amplifiers. It is also suitable for low voltage applications such as battery-operated circuits.
The IRFU9120PBF is a very useful device for many applications and is extremely versatile. It can be used for many different applications ranging from logic level converters to power supplies. Its low on-resistance, low power consumption, and fast switching make it suitable for a wide range of uses.
The specific data is subject to PDF, and the above content is for reference
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