Allicdata Part #: | IRFU9024PBF-ND |
Manufacturer Part#: |
IRFU9024PBF |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 8.8A I-PAK |
More Detail: | P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Throug... |
DataSheet: | IRFU9024PBF Datasheet/PDF |
Quantity: | 26 |
1 +: | $ 0.98280 |
10 +: | $ 0.86877 |
100 +: | $ 0.68639 |
500 +: | $ 0.53231 |
1000 +: | $ 0.42025 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFU9024PBF is a single N-channel enhancement mode MOSFET from Infineon Technologies, specifically designed to deliver high performance in a power switch application. The device’s advanced vertical trench cell structure and rapidly switching E-mode MOSFET technology allow it to provide fast, low-on-resistance switching at higher operating temperatures and high-end current ratings than many other MOSFETs. IRFU9024PBF is designed to be used in a variety of applications, including load switches, motor control, power factor correction and lighting applications.
The IRFU9024PBF device consists of an N-channel enhancement mode MOSFET. It has an adjustable voltage threshold between 0.3 V and 3.2 V, which allows the device to have fast switching in a wide input voltage range without the need for an external voltage regulator. This MOSFET is also thermally enhanced, which means it can heat up quickly and manage to dissipate the heat, offering more reliable over temperature protection. This device is also combined with robust gate protection, making it particularly suitable for powering DC-DC converters, motor control systems and general purpose power switching applications.
The IRFU9024PBF MOSFET is typically used in applications that require fast switching performance. The low RDS(ON) allows for less power loss, which is beneficial for applications that consume large amounts of power. The E-mode technology allows for fast switching, which is ideal for applications requiring frequent on/off timing or changing voltage requirements. The device also features advanced vertical trench cell structure, providing lower on resistance and improved temperature characteristics. This makes the IRFU9024PBF particularly suitable for high current applications.
The working principle of the IRFU9024PBF is relatively straightforward. When the gate voltage of the MOSFET is below the threshold voltage, the MOSFET is in the OFF state. In this state, current will not flow through the device. When the gate voltage is above the threshold, the MOSFET will be in the ON state. In this state, current can flow through the device. This type of operation is commonly used in switching applications, such as motor control and general power switching.
The IRFU9024PBF is ideally suited for a wide range of applications such as load switches, motor control, power factor correction and lighting. Its fast switching, low RDS(ON), and adjustable voltage thresholds, together with its robust gate protection, make it a great choice for these and many other applications. In addition, its advanced vertical trench cell structure provides superior temperature characteristics and ultra-low on-resistance, making it perfect for high current applications.
The specific data is subject to PDF, and the above content is for reference
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