Allicdata Part #: | IRFU210-ND |
Manufacturer Part#: |
IRFU210 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 2.6A I-PAK |
More Detail: | N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Throu... |
DataSheet: | IRFU210 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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An IRFU210 is an insulated gate field effect transistor, or IGFET, comprises a source and drain, a gate and a substrate. Unlike simple transistors, an IGFET does not require an external biasing circuit or an additional energy source. It can operate over a wide voltage range and can be used as an amplifier or in digital logic either in the linear or saturation mode. Therefore, it finds a broad range of applications.
In general, the IRFU210 is one type of IGFET. It has a breakdown voltage of 40 V and a maximum drain current of 210 mA. The power dissipation capability is 1 W. The low RDS(ON) and low gate charge makes this device ideal in automotive, industrial, and commercial applications, where high efficiency and fast switching are required. It is also commonly used in battery- operated devices, such as portable instrumentation, medical equipment, and mobile phones.
The working principle of the IRFU210 is relatively easy to understand. When a positive signal is applied to the gate and the drain-source voltage is high enough, a current will flow between the drain and the source. This causes a voltage drop across the drain-source, changing the voltage at the gate. This process is referred to as channel formation.
Once the channel is in place, the gate then controls how much current flows between the drain and the source. This is done by altering the voltage at the gate, which in turn influences the resistance between the drain and the source. The resistance is known as the channel resistance, or RDS(ON).
In general the IRFU210 can be used for a variety of purposes. It can be used for switching, amplification, noise reduction and signal conditioning. In addition, it can be used for level shifting and as a rectifier for various applications.
It can be used as an amplifier, for example, in audio and video equipment, where it can amplify weak signals and ensure a clear playback or reception. In addition, it can be used in switching circuits, in automated industrial processes where a voltage is used to control a component such as a motor, or in digital logic circuits, where it can be used as a logic gate to create a gate state.
The IRFU210 is also commonly used as a switch in power supply circuits, where it is used to regulate the power supply to a device. This is often done by connecting the drain to a voltage source and the gate to a control voltage. When the voltage at the gate is increased, the resistance between the drain and the source is decreased, allowing more current to pass through and thus allowing the power supply to be regulated.
Overall, the IRFU210 is an extremely versatile device which can be used for a number of applications. It has the ability to withstand high voltages and currents, making it suitable for use in a wide range of applications. It is also capable of fast switching, making it ideal for use in power supply circuits and digital logic circuits.
The specific data is subject to PDF, and the above content is for reference
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