Allicdata Part #: | IRFU3518-701PBF-ND |
Manufacturer Part#: |
IRFU3518-701PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 38A IPAK |
More Detail: | N-Channel 80V 38A (Tc) 110W (Tc) Surface Mount I-P... |
DataSheet: | IRFU3518-701PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-4, DPak (3 Leads + Tab) |
Supplier Device Package: | I-PAK (LF701) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFU3518-701PBF is a high power FET transistor designed for high current switching applications. It is a low-capacitance N-channel enhancement mode MOSFET, packaged in an 8-lead SOIC package. This MOSFET is designed for use in applications such as DC-DC converters, high current switching, and motor control, and can handle up to 28A of continuous drain current.
IRFU3518-701PBF is a high-power FET transistor capable of handling currents up to 28A. It is based on an advanced N-Channel MOSFET technology, offering maximum efficiency and minimum on-resistance. This device is ideal for applications such as DC-DC converters, high current switching, and motor control.
The IRFU3518-701PBF is an N-channel enhancement mode MOSFET, offering excellent frequency and temperature performance. This device is designed for use in high current switching applications and features excellent on-resistance, high-frequency operation, and low gate charge. It is the perfect solution for applications requiring high performance and low noise operation.
The working principle of the IRFU3518-701PBF is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. This device utilizes a gate-source voltage between the gate and source to control the flow of current through the channel of the transistor. A positive gate-source voltage will open the channel and allow current to flow through the device, while a negative gate-source voltage will close the channel and prevent current flow. In this way, the transistor can be used to act as a switch, allowing the user to control the flow of high currents with the application of a small control voltage.
The IRFU3518-701PBF is suitable for use in a wide range of high power switching applications. It is designed for use in DC-DC converters, high current switching, and motor control. Additionally, this device features excellent on-resistance, high-frequency operation, and low gate charge. These features make it suitable for use in high power, low noise applications such as automotive, industrial, and communications power systems.
The IRFU3518-701PBF is a high-performance FET transistor with excellent frequency and temperature performance. It is a low-capacitance N-channel enhancement mode MOSFET, packaged in an 8-lead SOIC package. This device is the perfect solution for applications requiring high performance and low noise operation, such as motor control, high current switching, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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