| Allicdata Part #: | IRFU220BTU_FP001-ND |
| Manufacturer Part#: |
IRFU220BTU_FP001 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 4.6A IPAK |
| More Detail: | N-Channel 200V 4.6A (Tc) 2.5W (Ta), 40W (Tc) Throu... |
| DataSheet: |  IRFU220BTU_FP001 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFU220BTU_FP001 is a single field effect transistor (FET) that is used for a variety of applications. It has low on-state resistance, high off-state breakdown voltage, and high switching speed.
The IRFU220BTU_FP001 is designed for use in a wide range of applications, including DC/DC switching converters, switching power adaptors, power inverters, and AC/DC power muxes.
The IRFU220BTU_FP001 is built on a fluorine-doped polysilicon gate process. This technology produces a FET with low on-state resistance, making it suitable for high-efficiency applications. The polysilicon gate process also allows the FET to control both positive and negative currents, making it suitable for application in AC/DC power muxes.
The IRFU220BTU_FP001 has a source-drain breakdown voltage of 600V. This makes it suitable for use in applications where high off-state voltages are required. Additionally, the device has an ESD rating of 8kV, making it highly reliable in applications where electrostatic discharge is a concern.
The IRFU220BTU_FP001 has a fast switching speed, with a gate charging time of 2ns and a gate discharge time of 2.4ns. This makes it well suited for use in high-speed switching applications such as DC/DC converters.
The IRFU220BTU_FP001 is a versatile FET that can be used in a wide range of applications. It has low on-state resistance, a high off-state breakdown voltage, and a fast switching speed. Additionally, it is highly reliable due to its ESD rating of 8kV. This makes it well-suited for use in a variety of power management applications.
The specific data is subject to PDF, and the above content is for reference
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