Allicdata Part #: | IRFU3910PBF-ND |
Manufacturer Part#: |
IRFU3910PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 16A I-PAK |
More Detail: | N-Channel 100V 16A (Tc) 79W (Tc) Through Hole IPAK... |
DataSheet: | IRFU3910PBF Datasheet/PDF |
Quantity: | 145 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRFU 3910PBF is a silicon N-channel Field Effect Transistor designed specifically for applications in the electronic industry. It has been designed with particular attention towards low gate drive requirements and is commonly used as a switch or amplifier in power control applications. It features a low resistance on-state and temperature stable operation, making it an ideal choice for many industrial applications.
The IRFU 3910PBF is an Enhancement mode MOSFET which is the most commonly used type of FET. It should be noted that the IRFU 3910PBF is tolerant to short-term overloads, which is significant when considering use in a variety of power control applications. It can be used with a wide range of voltage levels, making it well-suited for many applications.
The operating principle of an enhancement mode MOSFET is based on the gate-voltage control characteristic of the device. By applying a voltage to the gate, the MOSFET can be turned ON or OFF, depending on the magnitude of the gate voltage. For the IRFU 3910PBF, a gate-source voltage Vgs of between -3 volts and -8 volts will turn the MOSFET OFF and will limit the total drain-source current. Conversely, a Vgs of between -2 Volt and 3 Volts will result in the device being turned ON and allow current to flow through the device.
The IRFU 3910PBF is further designed to remain stable in power control applications. It has good thermal stability over a wide temperature range, including a maximum junction temperature of 175°C. It also has a maximum drain-source voltage rating of 60 Volts and a gate-source voltage rating of +/- 12 Volts. The combined resistances of the drain and source in the IRFU 3910PBF is typically 3.2 mOhms and the output capacitance is typically 350 pF.
The IRFU 3910PBF is well-suited for use in many power control applications. It can be used to switch signals between logic levels, effectively providing the necessary logic level switching functions. Additionally, the IRFU 3910PBF can provide amplification, allowing the current level to remain constant in the circuit, even if the voltage level changes. This, in turn, allows the current to remain constant during the switching process.
The IRFU 3910PBF also provides excellent performance when used in linear applications. It can be used as an amplifier or buffer to provide a constant voltage or current output, even if the input voltage or current level changes. It has a wide range of uses, including power supply designs, power amplifiers, data converters and voltage regulators.
Overall, the IRFU 3910PBF is a versatile and reliable field effect transistor. It has been designed for low gate drive requirements and has excellent thermal stability, making it well-suited for many industrial and commercial applications. Its low drain and source resistances and its high voltage ratings, make it suitable for many power control applications and for providing amplification in linear systems.
The specific data is subject to PDF, and the above content is for reference
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