IRFU9014PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	270pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	500 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.1A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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IRFU9014PBF application field and working principle

IRFU9014PBF is an N-channel enhancement mode field effect power transistor utilizing an advanced process technology and is primarily intended for power management applications. The product has already become popular and is widely used in various industrial components. To better explain its application field and working principle, this article briefly introduces its application field, package type and its working principle.

Application Field of IRFU9014PBF

IRFU9014PBF is mainly used in areas as follows: 1. Power management. It is suitable for power management applications such as computer motherboards and industrial control systems due to its excellent temperature and ESD performance. 2. Power switching. This product can also be used in the power supply control circuit or power switch circuit due to its high voltage and fast switching speed. 3. Automobile industry. IRFU9014PBF is widely used in automobiles, electrical and electronic systems. 4. Electronic products. As it is capable of providing sufficient power, it is widely used in electronic products such as televisions, digital players, and game consoles.

Package Type of IRFU9014PBF

The IRFU9014PBF is available in either small surface-mount packages in TO220, TO252, and SOT-223 packages. The large lead frame allows for additional die area and lower on-resistance, which ensures a higher power rating than those smaller packages with the same technology.

Working Principle of IRFU9014PBF

IRFU9014PBF is an N-channel enhancement-type metal oxide semiconductor field-effect power transistor. It has an advanced semiconductor process technology and is mainly used in power management applications. Basically, it uses a voltage gate to control current flow between two terminals, source and drain, allowing it to amplify signals and selectively switch power supply. The gate voltage is the only control parameter of the IRFU9014PBF transistor, which can be used to adjust the resistance between the source and the drain. When the voltage on the gate is low, the drain-source resistance, or gain, will be higher, making the device conduct less of the current in the load, which brings about voltage drop. Conversely, when the gate voltage is increased, the device conducts more current, thereby decrease the voltage drop.

Conclusion

To sum up, IRFU9014PBF, with its excellent temperature and ESD performance and powerful power management, is widely used in many areas, such as power management, power switching, automobile industry, and electronic products. With its small surface-mount packages, it can provide sufficient power to the load. Furthermore, its working principle is relatively simple yet powerful, and simply relies on the gate voltage to control the current flow between the source and the drain.

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