IRFU9024N Allicdata Electronics
Allicdata Part #:

IRFU9024N-ND

Manufacturer Part#:

IRFU9024N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 55V 11A I-PAK
More Detail: P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK ...
DataSheet: IRFU9024N datasheetIRFU9024N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 38W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFU9024N is a region-optimized N-channel PowerTrench MOSFET from International Rectifier. It is a two-terminal semiconductor device that is used in analog, digital and audio applications. This type of MOSFET is typically found in low power switching applications, as it is able to switch large currents with low noise and low power consumption. It can also be used for voltage or speed control of a motor.

The IRFU9024N is the N-channel version of this PowerTrench MOSFET. It is optimized for uses on the high side, meaning that it is most commonly used in applications where the source (the drain) of the MOSFET is connected to its higher voltage. It offers good noise immunity and high performance while operating at high frequencies due to its advanced process technology.

The IRFU9024N is a single-die MOSFET. This means that it is built on a single layer of silicon or glass, creating a single electronic component. Its single construction makes it easier to integrate it into different designs and its layout provides small physical dimensions.

In terms of its working principle, the IRFU9024N works by using the effects of back gate bias. This term refers to the use of a negative gate-to-source voltage to increase the capacity of the device, allowing it to switch large currents with small threshold voltages. It also uses the step voltage technique, which utilizes the gate-drain capacitance in order to reduce the voltage drop across the MOSFET.

The IRFU9024N is typically used in a variety of motor control applications. This includes motor speed and torque control, as well as starter motor control and brushed motor control. It is also used in drive applications, such as portable devices, home solar PV systems, automotive applications, industrial automation systems, and high voltage power supplies.

In addition, this type of MOSFET can be used for on/off control and variable voltage control in electronic devices. It is also used for high-frequency switching applications and voltage regulation, such as in power management systems.

Overall, the IRFU9024N is a robust and reliable N-channel PowerTrench MOSFET that can be used in a variety of applications, ranging from motor control to voltage regulation. It is optimized for uses on the high side and its single-die construction makes it easier to integrate into different designs. It is also able to switch large currents with low noise, low power consumption, and high reliability.

The specific data is subject to PDF, and the above content is for reference

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