IRFU2905Z

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1380pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	14.5 mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The IRFU2905Z is a N-channel MOSFET that is specifically designed so that it has very low gate charge and high gate-source voltage. This makes it perfect for many applications like synchronous buck converters, motor control, high speed switching, portable equipment, automotive, and industrial uses. Furthermore, this MOSFET is also well suited for applications that require fast switching and low voltage drop.</p><p><strong>Application Field</strong></p><p>The IRFU2905Z MOSFET is specifically designed so that it has low gate charge (Qg) and maximum drain-source voltage (VDS). This makes it suitable for many applications, including synchronous buck converters and motor control applications, as well as FET power switching and reducing a wide range of power supply noise. In addition, the IRFU2905Z is also suitable for applications that require fast switching, low voltage drop, and low gate-source capacitance; due to its low gate charge, it can switch with low energy loss.</p><p>In addition, the IRFU2905Z is also suitable for portable and automotive applications, such as automotive power regulation, load switch, and load sensing applications. This MOSFET can also be used for high-speed data transmission and signal conditioning. Furthermore, due to its high voltage rating and high stream capability, the IRFU2905Z can also be used for industrial and appliance applications, such as lighting systems and motor speed control.</p><p><strong>Working Principle</strong></p><p>The IRFU2905Z is a type of n-channel enhancement-mode MOSFET, which has four terminals: the gate, drain, source, and body (or substrate). The drain and source are the primary current-carrying terminals, while the gate acts as an insulated control.</p><p>In principle, the channel of the MOSFET is formed by the application of voltage at the gate. The voltage creates an electric field, which causes carriers to be generated at the silicon-oxide interface, forming a channel. As this channel is created, the source-drain path of the MOSFET is conducting. By varying the voltage at the gate, the size of this channel can be modulated, thus changing the resistance of the source-drain path. This resistance is known as the drain-source resistance (RDSon) of the MOSFET.</p><p>Furthermore, as the MOSFET’s gate-source capacitance (Cgs) is also very low, the turn-on time of the MOSFET is fast and the switching speed of the MOSFET is also high.</p><p>Finally, the IRFU2905Z also features a temperature compensation design that increases reliability during operation in extreme temperatures. In particular, the body diode helps prevent latch-up and primary breakdown, allowing the MOSFET to be used in high-current applications.</p>

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