Allicdata Part #: | IRFU9310-ND |
Manufacturer Part#: |
IRFU9310 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 400V 1.8A I-PAK |
More Detail: | P-Channel 400V 1.8A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | IRFU9310 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFU9310 is a type of Field Effect Transistor (FET) that integrates particularly high level of suppression with great effectiveness rather than surge protection against high levels of ESD / EFT. As such, the device is an ideal solution for protecting ESD sensitive components such as I/O ports, USBs, and any other household electronics.
The IRFU9310 is a single-channel FET device featuring a junction gate FET (JGFET). This type FET is especially effective in providing ESD protection for a wide range of input voltages, ESD pulses, and EFT pulses.
The IRFU9310 consists of two gate terminals, the gate which is a type of metal-oxide-semiconductor (MOS) field-effect transistor (FET) and the drain. The drain is the only FET output, while the gate controls the FET\'s operation. The following explains the working principle of the IRFU9310:
The IRFU9310 FET works in the same fashion as any other junctions FET. When the gate voltage applied to the gate is at logic low, the electrons at the drain side are blocked, due to the effect of the electric field produced by the gate. This creates an open circuit between the drain and source, resulting in a non-conduction state. As a result, no current can flow, and no protection is achieved.
However, when the applied gate voltage exceeds the threshold voltage, the electric field created by the gate at the drain side exceeds the threshold value. This causes the electrons to pass through the drain, allowing current to flow. As a consequence, the electrons become driven by the electric field, allowing the ESD, EFT pulses to be discharged, thus providing the required protection.
The IRFU9310 devices feature many characteristics that make them an ideal choice for ESD/EFT protection. The following are some of its key features:
- High level of ESD protection up to the standard specification of ±15kV contact and air gap discharge
- Gated drain feature for greater efficiency
- Minimal capacitance and high breakdown voltage
- High protection levels for EFTs, as well as long surge duration protection
These features make the IRFU9310 the ideal choice for a wide variety of industries. Its primary applications include consumer electronics such as phones and tablets, medical equipment, and automotive applications. In addition, the low capacitance of the IRFU9310 makes it the perfect solution for digital circuits, as it minimizes signal degradation.
The IRFU9310 is an ideal solution for ESD/EFT protection, providing high-efficiency protection levels with minimal signal degradation and low capacitance. Its primary application fields include consumer electronics, medical equipment, and automotive applications. With its wide range of features, the IRFU9310 provides an ideal solution for protecting sensitive components from ESD/EFT pulses.
The specific data is subject to PDF, and the above content is for reference
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