| Allicdata Part #: | IRFU3706-ND |
| Manufacturer Part#: |
IRFU3706 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 75A I-PAK |
| More Detail: | N-Channel 20V 75A (Tc) 88W (Tc) Through Hole IPAK ... |
| DataSheet: | IRFU3706 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | IPAK (TO-251) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 88W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFU3706 is a single field-effect transistor (FET) designed specifically for high voltage, low current applications. It is manufactured using an advanced semiconductor process and is designed to provide superior performance and reliability in a variety of applications. The IRFU3706 is capable of operating at voltages up to 550V, and can handle current requirements up to 125mA. It has a low on-resistance (RDSon) of 15 to 40mΩ and is available in a variety of package types, including plastic, ceramic and metal.
The IRFU3706 is a depletion-mode FET device, meaning that it is normally “on” and requires a negative gate voltage to turn it “off”. This characteristic makes it well-suited for a variety of applications, including low voltage, low current switching and reverse protection circuits. The device can also be used in other applications where low gate drive requirements or low signal levels are paramount, such as circuits requiring extremely low gate drive current or signal levels.
In addition to its low on-resistance and gate threshold voltage, the IRFU3706 offers excellent thermal and electrical stability in a variety of environments. The maximum operating temperature range is up to 125° Celsius. Furthermore, the device is highly resistant to electrostatic and electromagnetic fields, making it a good choice for use in portable or sensitive devices. The device also features a built-in circuitry protection scheme, which helps protect the FET from burnout due to static electricity.
The working principle of the IRFU3706 is quite simple. When a negative voltage is applied to the gate, the transistor\'s internal “channel” is opened, allowing current to flow between the source and drain terminals. When a positive voltage is applied to the gate, the internal channel is closed, preventing current flow. The on-resistance of the device then depends on the gate voltage; the greater the negative voltage, the lower the on-resistance becomes. This allows for precise current control, making the device ideal for a wide variety of applications.
The IRFU3706 is an ideal choice for a variety of applications, from low voltage switching, reverse protection and low power circuits. Its combination of low on-resistance, low gate threshold voltage and reliable operation in harsh environments make the device a great choice for both industrial and consumer applications. Its low gate capacitance ensures that switching times remain quick, and its built-in protection circuit helps protect against static electricity, making it perfect for highly sensitive portable and electronic equipment.
The specific data is subject to PDF, and the above content is for reference
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IRFU3706 Datasheet/PDF