IRFU7740PBF Allicdata Electronics
Allicdata Part #:

IRFU7740PBF-ND

Manufacturer Part#:

IRFU7740PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 75V 87A I-PAK
More Detail: N-Channel 75V 87A (Tc) 140W (Tc) Through Hole IPAK...
DataSheet: IRFU7740PBF datasheetIRFU7740PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFU7740PBF is a power field-effect transistor (FET) featuring an advanced Si-gate BiC-MOSFET process, a high voltage design, and the latest industry standards for low-on-resistance and low gate charge. The device is well-suited for high-efficiency power management in consumer and industrial system designs, providing high switching speed and low conduction losses.

The IRFU7740PBF is a single type of power FET and is mainly used in power management circuit designs. It features a low static drain-source on-resistance rating of 7.5 ohms for low conduction losses. The gate-source threshold voltage is -1.8V, reducing uncertainties and allowing for more precise power supply control. In addition, the device has a maximum drain-source voltage rating of 500V, enabling it to be used in a wide range of applications.

In terms of its switching performance, the IRFU7740PBF is a very fast device, with a typical turn-on delay time of 20ns, turn-off delay time of 16ns, and rise time of 14ns. This makes it suitable for high-speed switching applications such as PFC (Power Factor Correction), LLC (Lossless Link Converter), and UPS (Uninterruptible Power System). The low drain-source on-resistance rating of 7.5 ohms also helps to reduce conduction losses and improve system efficiency.

The working principle of the IRFU7740PBF is based on the FET (field-effect transistor) structure, which is a type of semiconductor device. In this device, a current or voltage applied to the gate terminal of the FET controls the flow of current through the channel region between the source and the drain terminals. This makes the FET an ideal device for controlling the current flow in power management circuits, as it allows current flow to be switched on and off quickly and easily.

The IRFU7740PBF is a versatile device that can be used in a wide range of power management applications. It features a high level of integration and a wide range of features which make it an attractive choice for power supply designers. With its advanced Si-gate BiC-MOSFET process, a high voltage design, and low-on-resistance and low gate charge, the IRFU7740PBF is an efficient power management solution for consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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