IRFU224 Allicdata Electronics
Allicdata Part #:

IRFU224-ND

Manufacturer Part#:

IRFU224

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 3.8A I-PAK
More Detail: N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Throu...
DataSheet: IRFU224 datasheetIRFU224 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFU224 Application Field and Working Principle

The IRFU224 is a standard Dual Common Source Enhancement Mode Field-Effect Transistor (DSCSEMFET) that is used in a variety of applications. Developed by Infineon, the IRFU224 offers a number of advantages over other types of transistors, including low power consumption, excellent operating temperature range, and a wide operating voltage range. This makes it a popular choice for many applications, including power amplifiers and computer power supplies, due to its superior efficiency.

The IRFU224 is a N-channel power MOSFET with a drain-source voltage rating only 2.4 volts. Its IDSS is 3A, which is excellent for a MOSFET of this size. The RDSon is 8 ohms when 10 volts is applied, and 4 ohms when 5 volts is applied. This makes it an ideal choice for applications that require low power consumption and efficient operation.

The IRFU224 also has an integrated back gate protection function. This helps protect the MOSFET from excess current and voltage that can cause permanent damage. This is especially important for applications where the output current may vary widely. The IRFU224 also has a single gate threshold voltage of 0.6V, which is far better than other MOSFETs.

The IRFU224 works by using an inversion layer between the drain and the gate terminals. When the gate voltage is greater than the threshold voltage, the inversion layer will become very thin. This allows a certain amount of current to flow between the drain and the gate, resulting in a conductive path between the two terminals. This is how the MOSFET will amplify and control the current passing through it.

The IRFU224’s versatility makes it an ideal candidate for a wide range of applications. From power amplifiers and computer power supplies to switching power supplies, the IRFU224 is an excellent choice due to its low power consumption and wide operating temperature range. This makes it well-suited for applications that demand reliable operation and long-term reliability.

As a consequence, the IRFU224 is a versatile device and can be used in many different contexts. For instance, it can be used as a switch in a wide variety of computer power supply designs or in audio systems. It can also be used as a switching transistor in motor controls. Furthermore, it can be used as a switching element in other circuits, such as interface controls, alarm systems, and data communications.

In conclusion, the IRFU224 is a versatile and dependable MOSFET, making it a great choice for many different applications. Its low power consumption, wide operating temperature range, and wide operating voltage range make it an excellent choice for a variety of applications. Additionally, its integrated back gate protection and single gate threshold voltage make it a great choice for applications where the output current may vary widely. As a result, the IRFU224 is a great choice for a variety of uses.

The specific data is subject to PDF, and the above content is for reference

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