| Allicdata Part #: | IRFU3303PBF-ND |
| Manufacturer Part#: |
IRFU3303PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 33A I-PAK |
| More Detail: | N-Channel 30V 33A (Tc) 57W (Tc) Through Hole IPAK ... |
| DataSheet: | IRFU3303PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | IPAK (TO-251) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 57W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 31 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFU3303PBF Application Field and Working Principle
The IRFU3303PBF is a Silicon field-effect transistor that belongs to the Single category of MOSFETs and FETs. It is mainly used in consumer electronics, smartphones, laptop computers, and automotive circuits, and has excellent power conversion efficiency, high switching speed, and low on-resistance, making it suitable for numerous applications. The IRFU3303PBF has a drain current (ID ) of 10 A and a drain to source voltage (VDS) of 40V.
The working principle of IRFU3303PBF is based on the electrical characteristic of MOSFETs, which is that the gate voltage controls the drain-source current. When the gate voltage is higher than the threshold voltage, the current will be allowed to pass through, and when the gate voltage is lower than the threshold voltage, the current will be blocked. The gate voltage is proportional to the drain-source current; as the gate voltage increases, the drain-source current also increases.
In order to make use of the MOSFETs in real-world applications, the gate is usually connected to another power supply source. By applying a different voltage to the gate, the drain-source current can be adjusted accordingly. This makes it possible to switch the drain-source current on and off, or to regulate the current flow.
The IRFU3303PBF is typically used as a power switch, where the gate voltage is used to control the drain-source current. When the gate voltage is applied, the drain-source current will be allowed to flow, and when the gate voltage is removed, the current is blocked. This makes it possible to switch the power on and off, or to regulate the current flow.
In addition to being used as a power switch, the IRFU3303PBF can also be used as a voltage regulator. By applying the correct gate voltage, it is possible to control the voltage of the drain-source current. This makes it possible to regulate the voltage at the output of the device.
The IRFU3303PBF is a versatile and highly efficient power switch. Its low on-resistance, high switching speed, and excellent power efficiency make it suitable for a variety of applications, such as consumer electronics, smartphones, laptop computers, and automotive circuits.
The specific data is subject to PDF, and the above content is for reference
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IRFU3303PBF Datasheet/PDF