Allicdata Part #: | IRFU110-ND |
Manufacturer Part#: |
IRFU110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 4.3A I-PAK |
More Detail: | N-Channel 100V 4.3A (Tc) 25W (Tc) Through Hole TO-... |
DataSheet: | IRFU110 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFU110 is a field-effect transistor (FET) that is used for power switching in different applications. It is a single-n-channel device with an Integrated Schottky diode that allows for low voltage, low current battery-powered applications. This transistor features a low ON resistance providing high current-handling capability with excellent thermal stability and reliable performance. It has a low capacitance and is capable of working with both low and high voltages.
The IRFU110 is primarily used in applications where high-frequency switching is required such as powered laptops, power supplies, or DC-DC converters. It can also be used in other applications where voltage and current control is necessary, including power distribution in automotive or telecom systems, audio and video switching, switching power supplies, and various industrial control systems.
The working principle of the IRFU110 involves it being turned on and off through a voltage-controlled gate. This is achieved by controlling the flow of electrons in the state of the transistor, which determines its resistance. By altering the amount of current in the gate, the resistance can be varied and the electrical characteristics of the transistor can be controlled. Hence, the IRFU110 can be used to switch either a series of load or a single load, depending upon the application.
The characteristics of an IRFU110 are mainly determined by its channel length, drain-to-source current, gate-to-source voltage, and gate-to-drain voltage. The channel length determines the ability of electrons to travel and affects the switching speed and power-handling capability of the device. The drain current mainly determines the power and the gate voltage mainly determines the switching speed. The gate-to-drain voltage determines the operating temperature of the device. The operating temperature affects the life of the device, so it must be taken into consideration while designing and installing the IRFU110.
The IRFU110 has been designed to maximize performance in switching and power control applications. It is capable of switching high currents with low power losses, low noise levels, and excellent thermal stability. It is also reliable and provides a long working life, making it an ideal choice for switching and power control applications.
In conclusion, the IRFU110 is a field-effect transistor (FET) that is used for power switching in different applications. It can switch high currents with low power losses, low noise levels, and excellent thermal stability. Its characteristics are determined by its channel length, drain-to-source current, gate-to-source voltage, and gate-to-drain voltage. It is an ideal choice for applications where high-frequency switching is required, or where voltage and current control is necessary.
The specific data is subject to PDF, and the above content is for reference
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