Allicdata Part #: | IRFU320-ND |
Manufacturer Part#: |
IRFU320 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 3.1A I-PAK |
More Detail: | N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Throu... |
DataSheet: | IRFU320 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRFU320 is a single N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), introduce by IRF (International Rectifier). This MOSFET transistor is capable to provide high speed operation, high current and power handling capability in a small package size. It is suitable for applications such as switching regulators, as well as general purpose switching and amplifier applications, such as audio amplifiers.
The IRFU320 is a fifth generation of advanced wafer technology High Power MOSFET transistor, made by International Rectifier. This transistor uses a number of rules for standard semiconductor process technology that enhance the speed performance and power dissipation of the device. The features of the IRFU320 include the following:
- Enhanced Speed Performance: A high frequency capability and a low Qg (gate charge) allow for faster devices.
- High Current Switching Capability: A low Cres and a low Rdson (drain-source on resistance) enable the device to handle high current switching.
- Low Gate Resistance: With a low Rg, the transistors can provide Low ON resistance and less power consumption.
- Low Offset Voltage: A low Voffs offers improved accuracy and improved break-up characteristics.
- Low Noise: With a low noise and a low thermal impedance, the device is suitable for high speed operation.
The IRFU320 is mainly used in switching regulators, with switching frequencies up to 500 kHz. It can be used as an OFET (operational FET) in audio amplifiers, with good linearity and low distortion. It can also be used as a power switch in a single pole-double throw (SPDT) switch application.
The working principle of the IRFU320 MOSFET is the same as for other MOSFET transistors. It consists of an insulated gate, a channel, a source and a drain. The gate is separated from the channel by a thin insulating layer, and the source and drain are connected to a voltage or current source. When a voltage is applied to the gate, it attracts electrons from the source towards the gate and repels electrons from the drain towards the gate. This creates a conductive channel between the source and the drain, allowing current to flow through the transistor.
In addition to the typical uses of the IRFU320 in switching regulators and audio amplification systems, the device can also be used as a high current switch in relay systems. The IRFU320 is a simple and efficient device that allows the switching of large currents, at a frequency of up to 500 kHz, without the need for additional components or a complicated circuit.
The IRFU320 MOSFET is an efficient, low noise and low power consuming device. It is suitable for applications in switching regulators, audio amplifiers, switches and rel
The specific data is subject to PDF, and the above content is for reference
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