| Allicdata Part #: | IRFUC20-ND |
| Manufacturer Part#: |
IRFUC20 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 2A I-PAK |
| More Detail: | N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through... |
| DataSheet: | IRFUC20 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251AA |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.4 Ohm @ 1.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFUC20 Application Field and Working Principle
The IRFUC20 is one of the most popular FETs (Field Effect Transistor) available on the market today. It is used in a variety of applications, such as controlling power supplies and circuits, amplifying signals, and helping to regulate the current and power flow within various components of devices. In this article we take a look at the application fields, working principle, and other information relevant to the usage of the IRFUC20.
The application field for an IRFUC20 is quite varied; this particular FET is commonly used for power switching, power amplification, and voltage regulation. It is also often used as a voltage buffer, helping to regulate the amount of current that can pass through a circuit or component. In addition, the use of the FET can help reduce losses in power supplies, as it helps to distribute power more efficiently.
When looking at the working principle of the IRFUC20, it\'s important to understand the physical structure of the FET. The circuit diagram of a typical FET is simple, featuring just the gate, the source, and the drain between them. Generally, the IRFUC20 features an N-channel construction, meaning it is composed of regions with different conducting properties. If a positive voltage is applied to the gate, it can induce a depletion region in the channel, causing more current to flow through.
In order to maximize its performance, the IRFUC20 should be installed in a proper manner. It is important to ensure that the gate voltage does not exceed its MAX VGS, as this can result in permanent damage. It should also be connected via its source and drain, preferably to a low resistance region. Additionally, it is important to maintain adequate thermal management, as this can affect performance significantly.
Overall, the IRFUC20 is an effective and popular FET, as it can be used in a variety of applications with good results. It is important to understand its application field and working principle, however, in order to ensure that it is used correctly and safely. That said, with proper installation and connection, the IRFUC20 can be a great addition to any circuit.
The specific data is subject to PDF, and the above content is for reference
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IRFUC20 Datasheet/PDF