IRL3102SPBF Allicdata Electronics
Allicdata Part #:

IRL3102SPBF-ND

Manufacturer Part#:

IRL3102SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 61A D2PAK
More Detail: N-Channel 20V 61A (Tc) 89W (Tc) Surface Mount D2PA...
DataSheet: IRL3102SPBF datasheetIRL3102SPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3102SPBF is a high performance N-channel MOSFET developed using International Rectifier\'s Advanced metal-oxide-semiconductor (MOS) technology. It features low on-resistance, low gate charge, fast switching speeds and wide gate threshold range, making it ideal for a wide range of applications that require high performance and reliability.

IRL3102SPBF is a single n-channel MOSFET which is primarily used for applications such as power switching, low-power DC-DC conversion, DC motor control, and many more. It is commonly used in a wide range of portable and home electronics. It is a perfect choice for applications that require low on-resistance, low gate charge, fast switching speeds and wide gate threshold range. This means it can operate at higher voltages and higher currents, making it suitable for more demanding applications.

The IRL3102SPBF features an advanced 30 V, 12 A, 30 mΩ MOSFET technology with improved RDS(on) and low Qg. Its low RDS(on) reduces switching losses, resulting in higher efficiency during operation. The device\'s low gate charge reduces power loss and enhances circuit switching performance. It also features faster switching speed and improved thermal performance, making it ideal for high-frequency applications that require high-performance and high reliability.

The IRL3102SPBF’s working principle is fairly straightforward. When the gate voltage (Vgs) is below the threshold voltage Vgs(th), the transistor is turned off and no current will flow through the drain-source path. When Vgs reaches Vgs(th), the transistor is turned on, causing current to flow through the drain-source path. The amount of current flow is proportional to the gate voltage Vgs.

In addition to the IRL3102SPBF being used in a wide range of applications, it is also able to help engineers meet more advanced power management requirements. For example, it can be used in applications that require high frequency switching, pulse width modulation and other complex power-processing techniques. It is also able to help engineers save time and money designing and testing their systems, due to its fast switching speed, low on-resistance, and low gate charge.

The IRL3102SPBF is a versatile and highly reliable device that is used in a range of applications, from consumer electronics to automotive, industrial and aerospace applications. Its advanced MOSFET technology makes it an ideal choice for designers who require high-performance and high reliability, as well as power savings. Its low on-resistance, low gate charge, fast switching speeds and wide gate threshold range make it suitable for a wide range of applications that require power, efficiency, and reliability.

The specific data is subject to PDF, and the above content is for reference

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