IRL3714ZSTRLPBF Allicdata Electronics
Allicdata Part #:

IRL3714ZSTRLPBF-ND

Manufacturer Part#:

IRL3714ZSTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 36A D2PAK
More Detail: N-Channel 20V 36A (Tc) 35W (Tc) Surface Mount D2PA...
DataSheet: IRL3714ZSTRLPBF datasheetIRL3714ZSTRLPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRL3714ZSTRLPBF Application Field and Working Principle

IRL3714ZSTRLPBF is an advanced type of field effect transistor (FET), also known as a metal oxide semiconductor field effect transistor (MOSFET). This type of transistor is of the single type, meaning that it has only one input and one output. Unlike a normal FET, a MOSFET can be used in both high and low impedance applications. This makes them more versatile than other FETs.

The IRL3714ZSTRLPBF is specifically designed to provide low input impedance, low output capacitance, low power consumption and fast switching times for applications such as power conversion, amplifier or radio frequency (RF) applications. It is a part of the exclusive Infineon Automotive VIPower MOSFET family, and thus is especially suitable for use in the automotive industry. This type of FET is also used in the medical and consumer electronics industries.

The IRL3714ZSTRLPBF FET offers excellent performance in both dc and ac applications, due to its low switching time and low on-resistance. The device can handle up to 60V and has an isolation voltage of 600V. Additionally, the device has a high current rating, making it suitable for high-power applications.

The device is manufactured by Infineon, a leading semiconductor company. The package the IRL3714ZSTRLPBF is housed in is the PowerPAIR, which has been designed to provide ultra-low on-resistance in a low-cost package.

To understand how the IRL3714ZSTRLPBF works it is necessary to first discuss the basic principles of MOSFET operation. In a MOSFET the drain, source, and gate are the three electrical terminals. The flow of current from the drain to the source is controlled by the charge on the gate terminal. When the gate is positively charged, a depletion layer forms, making it difficult for current to pass between the drain and the source. When the gate is negatively charged, the depletion layer disappears and current can flow freely between the drain and source.

The IRL3714ZSTRLPBF FET provides excellent performance due to its low input impedance and low output capacitance, as well as its low power consumption and fast switching times. This makes the device suitable for many different applications, such as power conversion, amplifiers, and RF applications, particularly in the automotive, medical, and consumer electronics industries.

The specific data is subject to PDF, and the above content is for reference

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