IRL3705NSTRLPBF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 170W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3600pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	98nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	10 mOhm @ 46A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	89A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRL3705NSTRLPBF Application Field and Working Principle

Introduction:

IRL3705NSTRLPBF is a 2.5V low-side MOSFET. It exhibits high input impedance, fast switching speed and low on-resistance. It is suitable for use in lighting, motor control, battery management and over-temperature protection applications.

Application Field:

IRL3705NSTRLPBF is suitable for use in lighting, motor control, and battery management applications. This MOSFET is capable of switching with very low on-resistance and is ideal for low-voltage, low power applications. Its fast switching speed and low input capacitance allow it to switch rapidly, which makes it ideal for high-speed switching applications.It is also capable of performing over-temperature protection. Its integrated thermal protection circuit helps to protect the device and circuitry from damages caused by high temperatures. This MOSFET is also suitable for use in hot-swap applications, and its low input capacitance makes it ideal for power supply sequencing and power-on reset.

Working Principle:

The IRL3705NSTRLPBF is a MOSFET that uses a semiconductor channel to control the flow of electric current between the source and drain terminals. It is an enhancement mode power MOSFET, which means that it requires a positive voltage from the gate to the source in order to switch on the device. When the voltage is applied to the gate, a layer of electrons will be attracted to the oxide layer. This will create a channel between the source and drain, allowing current to flow. The logic level gate of the IRL3705NSTRLPBF makes it possible to switch the device with a low voltage, which reduces power consumption and makes it more efficient. The device’s low on-resistance also gives it excellent conduction capabilities, making it ideal for low power applications that require fast switching speeds. The IRL3705NSTRLPBF is also temperature protected, and has an integrated thermal protection circuit that helps to protect the device and circuitry from damages caused by high temperatures.

Conclusion:

IRL3705NSTRLPBF is a 2.5V low-side MOSFET that is suitable for use in lighting, motor control, battery management and over-temperature protection applications. It has a high input impedance, fast switching speed and low on-resistance, making it ideal for low voltage and low power applications. Its integrated thermal protection circuit helps to protect the device and circuitry from damages caused by high temperatures, and its low input capacitance makes it an ideal choice for power supply sequencing and power-on reset.

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