IRL3715ZCS Allicdata Electronics
Allicdata Part #:

IRL3715ZCS-ND

Manufacturer Part#:

IRL3715ZCS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 50A D2PAK
More Detail: N-Channel 20V 50A (Tc) 45W (Tc) Surface Mount D2PA...
DataSheet: IRL3715ZCS datasheetIRL3715ZCS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3715ZCS is a very popular power MOSFET from Infineon that is typically used in applications ranging from synchronous rectification, high-side switching, load switching and low-side switching. It is a single P-channel enhancement mode MOSFET in a D-pak (TO-252) package with a drain-source voltage rating of 60 V and a continuous drain current of 17 A. It is designed for high-side and low-side switching in DC/DC converters and other applications were high power and low on-resistance is critically required.

This device has an advanced silicon oxide thin film technology which helps it achieve an on-resistance value as low as 15 mΩ. It is designed with a floating channel that allows the source terminal to remain at ground level when the device is off, which eliminates the need for a level-shift circuit, significantly reducing costs and complexity. In addition, it is also RoHS compliant and has an ESD rating of up to 2kV.

The IRL3715ZCS is a simple and cost-effective FET, which makes it ideal for applications ranging from automotive, solar and industrial applications. Its high-quality construction ensures that it features low gate and output capacitance as well as a low gate charge. It is also capable of switching high voltages and currents quickly and safely, due to its low on-resistance and high voltage ratings.

The IRL3715ZCS is an enhancement mode MOSFET which means it has an extra gate voltage to turn it on. This extra voltage causes the device to become conducting and the drain current then flows from the drain to the source. In order to turn it off, the gate voltage needs to be brought back to 0V. This device works by changing the resistance between the drain and source, allowing the voltage applied at the drain and source to control the current flow. It takes less power and is able to support a higher voltage drop, making it more efficient and cost-effective than other power MOSFETs.

In conclusion, the IRL3715ZCS is a simple and efficient power MOSFET with a wide range of applications. It has a low on-resistance, high voltage rating and can support high-side and low-side switching. It is cost-effective, RoHS compliant and has a high ESD rating. It is an ideal choice for applications such as synchronous rectification, high-side switching and load switching.

The specific data is subject to PDF, and the above content is for reference

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