IRL3303 Allicdata Electronics
Allicdata Part #:

IRL3303-ND

Manufacturer Part#:

IRL3303

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 38A TO-220AB
More Detail: N-Channel 30V 38A (Tc) 68W (Tc) Through Hole TO-22...
DataSheet: IRL3303 datasheetIRL3303 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
FET Feature: --
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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.
The IRL3303 MOSFET is an advanced power MOSFET, commonly used for its low on-resistance, fast switching speed, and low gate charge characteristics. Developed by the International Rectifier Corporation, it has a voltage rating of 30 V and a continuous current rating up to 8 A. It is suitable for use in a variety of power management and conversion applications.The IRL3303 MOSFET technology allows it to be used in various types of power conversion circuits such as switched-mode power supplies, DC/DC converters, and inverters. This technology also makes it ideal for applications where very low on-resistance is required, such as motor control circuits and motor drive systems. The gate-to-source voltage (Vgs) of this device makes it well suited for high-side switching applications while keeping the drive devices well within their safe-operating area.In terms of the operating principle, the IRL3303 MOSFET works by using an insulated metal oxide (IMO) layer to separate the source from the drain. This layer allows the gate voltage to control the resistor between the source and the drain. By controlling the gate voltage, the resistance between the source and the drain can be varied and this will change the current that flows through the device. When the current flow is increased, the transistor will be “on” and will conduct. When the current flow is reduced, the transistor will be “off” and will not conduct.In terms of its effects on power supply circuits, the IRL3303 MOSFET is capable of reducing the total number of components needed in a power supply circuit. This is due to its low RDS(on) and the flexibility of its gate to source voltage characteristics. Moreover, the IRL3303 MOSFET also offers excellent switching performance, low gate charge and high-side switching capabilities. This performance is further imparted by its superior thermal and mechanical properties such as lower power dissipation, enhanced reliability and better power efficiency.In conclusion, the IRL3303 MOSFET technology offers a wide range of advantages, making it the ideal choice for power conversion circuits. Its low RDS(on), fast switching speed, and low gate charge characteristics make it ideal for applications that require high-side switching, such as motor control and motor drive circuits. Additionally, the device can also reduce the total number of components necessary in power supply circuitry. All of these features make it the perfect choice for a variety of power management and conversion applications.

The specific data is subject to PDF, and the above content is for reference

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