| Allicdata Part #: | IRL3103D2PBF-ND |
| Manufacturer Part#: |
IRL3103D2PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 54A TO-220AB |
| More Detail: | N-Channel 30V 54A (Tc) 2W (Ta), 70W (Tc) Through H... |
| DataSheet: | IRL3103D2PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 70W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
| Series: | FETKY™ |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 32A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRL3103D2PBF is a part of a family of Single N-Channel Power MOSFETs. It is mainly used in applications that require low on-resistance and low gate drive to turn the transistor on and off. MOSFETs are versatile and can be used in a variety of applications. They are the most common type of transistor found in most systems and are widely used in the semiconductor industry.
The IRL3103D2PBF is a single N-channel MOSFET that features low on-state resistance, fast switching times, and low gate drive to turn the transistor on and off. This makes it ideal for applications that require high switching speeds and low power dissipation. This type of MOSFET is used mainly for power switching and in power converter applications.
The IRL3103D2PBF has a maximum drain-source voltage rating of 30V and a maximum drain current of 9A. It also has a maximum gate threshold voltage of –2V. Its on-state resistance RDS(on) is 0.008Ω and its gate charge Qg is 7.2nC. It has a total gate charge of 13.5nC which is low compared to other similar MOSFETs.
The IRL3103D2PBF is suitable for a variety of applications. It can be used in switch mode power supplies, automotive electronics, telecom, and instrumentation/measurement applications. It can also be used for DC-DC converters, motor control, and lighting. It is also used in audio and video amplifiers, and battery chargers.
The IRL3103D2PBF works on a principle similar to that of a standard MOSFET. It works by applying a voltage to its gate terminal which, when it reaches a certain threshold, charges the gate capacitance and turns the transistor on. The larger the voltage applied to the gate, the larger the gate charge, and the lower the off-state resistance. This reduces the amount of power required to switch the transistor on and off. It also allows for a faster switching speed, as the transition time is shorter.
The IRL3103D2PBF is an ideal choice for applications where low off-state resistance, fast switching speeds, and low power dissipation are needed. Its low gate charge and low on-state resistance make it an excellent choice for power switching applications, DC-DC converters, and motor control. It is also suitable for automotive electronics, telecom, and audio and video applications.
The specific data is subject to PDF, and the above content is for reference
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IRL3103D2PBF Datasheet/PDF