Allicdata Part #: | IRL3715PBF-ND |
Manufacturer Part#: |
IRL3715PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A TO-220AB |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Through... |
DataSheet: | IRL3715PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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:The IRL3715PBF is a high voltage and high current MOSFET (Metal Oxide Semiconductor Field Effect Transistor), specifically designed for efficient switch mode power supply (SMPS) applications. It is capable of withstanding extreme temperatures and is suited to a wide range of applications such as dc/dc converters, inverters and envelope tracking integrated circuits.
The IRL3715PBF is a relatively easy-to-use device with excellent performance characteristics. It is a single-gate MOSFET with a breakdown voltage of 100V and a drain-source current of up to 14A. This device is also unique in that it has a relatively low Input Capacitance (Cgs), which makes it excellent for switching applications that require low switching losses. The IRL3715PBF also has an exceptionally low drain-source on-resistance (Rds), making it a great choice for those applications where efficiency is of the utmost importance.
The working principle of the IRL3715PBF is relatively simple. It relies on the field effect principle to control the conductance of its drain-source path. When a voltage is applied to the gate, it induces a transfer of charge carriers between the source and drain regions. This creates an electric field that modulates the resistance of the channel between the two regions. The magnitude of this resistance is known as the device’s threshold voltage.
In most applications, the IRL3715PBF is used in a linear topology. This means that the gate voltage is gradually increased or decreased, allowing for a linear regulation of the drain current. The IRL3715PBF is most commonly used for synchronous rectification and PFC (Power Factor Correction) applications, although it is also suitable for other inverter and direct-connect applications. Additionally, it can be used in combination with other MOSFETs for lower output voltage/current applications and for current-limiting applications.
The versatility of the IRL3715PBF makes it a great choice for applications ranging from telecoms to lighting and other industrial and consumer electronics applications. It has excellent thermal performance, and its wide range of features make it an excellent choice for most applications. It is also a cost-effective choice, as it is priced competitively. Furthermore, it is highly reliable, and its compact size makes it easy to integrate into most circuit designs.
In conclusion, the IRL3715PBF is a single-gate MOSFET suitable for a variety of applications where efficiency, reliability, and cost-effectiveness are of the utmost importance. It has a breakdown voltage of 100V and a maximum drain-source current of 14A, making it well-suited for most SMPS applications. It has a low input capacitance and low Rds, making it excellent for switching applications that require low losses. Additionally, it is highly reliable and cost-effective, making it an ideal choice for most applications.
The specific data is subject to PDF, and the above content is for reference
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