IRL3715TRR Allicdata Electronics
Allicdata Part #:

IRL3715TRR-ND

Manufacturer Part#:

IRL3715TRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 54A TO-220AB
More Detail: N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Through...
DataSheet: IRL3715TRR datasheetIRL3715TRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRL3715TRR is a single-chip integrated MOSFET, a type of field-effect transistor (FET). MOSFETs are devices that can be used for switching, amplifier and digital logic gate applications. The IRL3715TRR belongs to the series of devices designed specifically for high power, low noise signal processing systems. The IRL3715TRR is designed to provide high switching speed, high efficiency and low on resistance, making it ideal for high-current applications.

The main advantage of the IRL3715TRR lies in its integration of both the source and drain terminals into a single package, allowing for a much lower thermal resistance than traditional packages. This makes it capable of handling much higher currents than a similarly sized conventional FET. The chip packaging of the IRL3715TRR also provides excellent thermal performance by maximizing heat transfer from the chip to the heat sink. Furthermore, this device is manufactured using a reliable and high-temperature process, which minimizes process drift and improves product yields.

The IRL3715TRR offers excellent performance in both DC as well as AC applications. It has a low output capacitance, making it well suited for high-speed applications. It also features excellent noise immunity and ESD protection, making it ideal for use in noise sensitive systems. Furthermore, the device has a high input impedance, which results in good signal isolation from the rest of the system. The IRL3715TRR also features low gate charge, making it ideal for use in high-performance applications.

When it comes to the operation of the IRL3715TRR, a positive voltage is typically applied to the gate of the device to turn the drain-source current on. This is known as the "enhancement-mode" of operation. The device can also be operated in "depletion-mode" if a negative voltage is applied to the gate. In this operational mode, the source-drain current is turned off. When the drain-source current is off, no power is consumed, making the device ideal for power saving applications.

The IRL3715TRR has a wide range of operating conditions and features such as overvoltage protection, short circuit protection, over-temperature protection and thermal shutdown. This allows for reliable operation of the device in a variety of applications. The IRL3715TRR also has a built-in protection circuit, which helps to protect the device from overcurrent conditions.

In conclusion, the IRL3715TRR is a single-chip MOSFET that is ideal for use in high power, low noise signal processing systems. Its low on resistance and integrated source and drain terminals provide excellent thermal performance. The device also offers excellent performance in high-speed applications, as well as in noise sensitive systems. Furthermore, it has a wide range of operating conditions and features, making it perfect for many applications.

The specific data is subject to PDF, and the above content is for reference

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