Allicdata Part #: | IRL3715ZSTRLPBF-ND |
Manufacturer Part#: |
IRL3715ZSTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 50A D2PAK |
More Detail: | N-Channel 20V 50A (Tc) 45W (Tc) Surface Mount D2PA... |
DataSheet: | IRL3715ZSTRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRL3715ZSTRLPBF is a state-of-the-art n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from International Rectifier. It is a single-ended package with a dual-gate structure and is widely used in low-side power switch loads for positive and negative voltages. This MOSFET is capable of delivering a high current load with low gate charge and low RDS(on) through its advanced design. The IRL3715ZSTRLPBF also has exceptionally low gate resistance and an integrated temperature sensing feature.
In order to understand the IRL3715ZSTRLPBF\'s application uses and working principles, let us first look at how a MOSFET works in general. A MOSFET is a transistor that uses the electric field of a gate electrode to control the current flowing through the device, instead of varying the bias currents. The gate electrode is insulated from the semiconductor material, so the gate voltage only affects the current of the transistor, but does not draw current itself. The strategy used to control the current is to create a voltage difference between the gate and the source of the device, which is known as the gate-source voltage (Vgs).
The IRL3715ZSTRLPBF is an enhancement-mode MOSFET, meaning that it is normally "off" and requires a positive voltage at the gate to turn it "on". This makes the IRL3715ZSTRLPBF suitable for applications such as power switch loads, motor control and electronic automotive systems that require high-speed switching with low on-resistance. In addition, the integrated temperature sensing feature ensures that the device stays within safe operating temperature limits during operation.
The IRL3715ZSTRLPBF is engineered with a low gate charge and low RDS(on) to minimize conduction loss and ensure long-term stability. Its low gate resistance ensures fast switching and its dual-gate structure helps to minimize leakage current. As a result, the IRL3715ZSTRLPBF is an ideal choice for high-efficiency switching applications.
The IRL3715ZSTRLPBF is an ideal choice for a variety of different applications. It is capable of switching high current loads with low gate charge and low RDS(on), and is well-suited for high-speed switching applications such as automotive systems and power switch loads. Its integrated temperature sensing feature allows for safe operation and its low gate resistance ensures fast switching. Overall, the IRL3715ZSTRLPBF is an excellent choice for applications where low losses and high-speed switching are required.
The specific data is subject to PDF, and the above content is for reference
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