IRL3714S Allicdata Electronics
Allicdata Part #:

IRL3714S-ND

Manufacturer Part#:

IRL3714S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 36A D2PAK
More Detail: N-Channel 20V 36A (Tc) 47W (Tc) Surface Mount D2PA...
DataSheet: IRL3714S datasheetIRL3714S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 47W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3714S is a single-source high-speed, high-current MOSFET from International Rectifier Corporation. It is designed as an integrated solution for high-current, low-voltage applications such as DC-DC converters, printers, and motor controllers. It is engineered to provide superior efficiency, low on-resistance, and low gate charge for space-constrained applications. The IRL3714S is an advanced Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) device that can be used in a wide range of applications.

The IRL3714S is capable of operating at output currents up to 25A and voltage levels up to 30V, making it ideal for use in DC-DC converters, UPS systems, and audio power amplifiers. The package features an exposed drain pad which provides excellent thermal conduction and is coupled with a low profile lead frame to provide excellent thermal dissipation. The IRL3714S has a built-in gate-protection diode and reverse recovery protection, ensuring reliable operation and preventing damage to the device in the event of a fault.

The IRL3714S works by applying a low-level DC voltaged, referred to as the gate voltage, to the gate terminal. This voltage, typically 0V to 1V, causes a change in current at the drain. Depending on the amount of voltage applied to the gate, the resistance of the MOSFET changes, allowing current to flow more or less freely between the source and the drain. When no voltage is applied, the device is in a conducting state and current is free to flow. When a positive voltage is applied, the device is in an off-state and current is constrained. This process is known as voltage-controlled current conduction.

The IRL3714S embodies several features which make it ideal for use in high-speed, high-current applications. It features a low on-resistance of about 0.4Ω for operation in the normal mode (the mode just described), and as low as 0.2Ω for operation in the enhanced mode. This low resistance allows the device to achieve higher efficiency under load, making it well-suited for load-switching and battery-charge applications. The device also features a low gate charge of only 10nC, reducing switching losses and enabling high-current operation at higher frequencies.

The IRL3714S is well-suited for any application that requires a fast switching transistor with low on-resistance and low gate charge. It is particularly useful in DC-DC converter and UPS applications, where efficiency and reliability are key factors. The device is also suitable for audio power amplifiers, as its high-current capability and low gate charge enable it to operate at higher frequencies than conventional MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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