Allicdata Part #: | IRL3714S-ND |
Manufacturer Part#: |
IRL3714S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A D2PAK |
More Detail: | N-Channel 20V 36A (Tc) 47W (Tc) Surface Mount D2PA... |
DataSheet: | IRL3714S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL3714S is a single-source high-speed, high-current MOSFET from International Rectifier Corporation. It is designed as an integrated solution for high-current, low-voltage applications such as DC-DC converters, printers, and motor controllers. It is engineered to provide superior efficiency, low on-resistance, and low gate charge for space-constrained applications. The IRL3714S is an advanced Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) device that can be used in a wide range of applications.
The IRL3714S is capable of operating at output currents up to 25A and voltage levels up to 30V, making it ideal for use in DC-DC converters, UPS systems, and audio power amplifiers. The package features an exposed drain pad which provides excellent thermal conduction and is coupled with a low profile lead frame to provide excellent thermal dissipation. The IRL3714S has a built-in gate-protection diode and reverse recovery protection, ensuring reliable operation and preventing damage to the device in the event of a fault.
The IRL3714S works by applying a low-level DC voltaged, referred to as the gate voltage, to the gate terminal. This voltage, typically 0V to 1V, causes a change in current at the drain. Depending on the amount of voltage applied to the gate, the resistance of the MOSFET changes, allowing current to flow more or less freely between the source and the drain. When no voltage is applied, the device is in a conducting state and current is free to flow. When a positive voltage is applied, the device is in an off-state and current is constrained. This process is known as voltage-controlled current conduction.
The IRL3714S embodies several features which make it ideal for use in high-speed, high-current applications. It features a low on-resistance of about 0.4Ω for operation in the normal mode (the mode just described), and as low as 0.2Ω for operation in the enhanced mode. This low resistance allows the device to achieve higher efficiency under load, making it well-suited for load-switching and battery-charge applications. The device also features a low gate charge of only 10nC, reducing switching losses and enabling high-current operation at higher frequencies.
The IRL3714S is well-suited for any application that requires a fast switching transistor with low on-resistance and low gate charge. It is particularly useful in DC-DC converter and UPS applications, where efficiency and reliability are key factors. The device is also suitable for audio power amplifiers, as its high-current capability and low gate charge enable it to operate at higher frequencies than conventional MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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IRL3716STRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 180A D2PA... |
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IRL3103STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 64A D2PAK... |
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